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TPC8120

P-CH MOSFET, -30V -5A, 30mOhm, SOP-8

7890

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Pieza del fabricante：

TPC8120

Paquete：

SOP-8 (5.2 x 6.2 x 1.7 mm)

Marca：
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Descripción

Productos

The TPC8120 from Toshiba is a -30V, -5A P-channel power MOSFET with 30mOhm RDS(ON) in an SOP-8 surface mount package.

Especificaciones

Tipo P-Channel Power MOSFET
VDS -30 V
ID -5 A @ VGS=-10V
RDS(ON) 30 mOhm (typical) @ VGS=-10V
VGS(th) -0.8V to -2.0V
Power Dissipation 2 W @ TA=25C
Paquete SOP-8 (5.2 x 6.2 x 1.7 mm)
Temperatura de funcionamiento -55C to +150C (TJ)

Características

  • -30V, -5A P-channel MOSFET
  • Ultra-low 30mOhm RDS(ON) at VGS=-10V
  • Logic-level gate threshold (-0.8V to -2.0V)
  • SOP-8 surface mount package
  • Low gate charge for fast switching

Aplicaciones

  • Battery load switches
  • Power management switching
  • DC-DC converter high-side switch
  • Reverse polarity protection

The TPC8120 from Toshiba is a -30V, -5A P-channel power MOSFET in an SOP-8 surface mount package. The 30 mOhm typical RDS(ON) at VGS=-10V provides extremely low conduction loss for high-efficiency switching applications. The logic-level gate threshold (-0.8V to -2.0V) allows direct drive from 3.3V or 5V microcontrollers. The SOP-8 package with exposed drain pad provides good thermal performance with 2W power dissipation at 25C ambient. The device is ideal for battery-powered load switches, DC-DC converter high-side switches, and reverse polarity protection circuits. The low RDS(ON) minimizes voltage drop and power dissipation in high-current applications.

The TPC8120 is a vertical P-channel power MOSFET constructed using a trench-gate structure. The P-type body and N-type epitaxial layer form the basic MOSFET structure, with deep trenches etched into the silicon and lined with gate oxide and polysilicon to create the gate electrodes. When VGS exceeds the threshold voltage (VGS(th) = -0.8V to -2.0V), an inversion layer (P-channel) forms under the gate oxide, connecting the P+ source to the P+ drain through the N-type body. The 30 mOhm RDS(ON) is achieved through a high cell density trench structure that maximizes channel width per unit area. The P-channel MOSFET has approximately 2-3x higher RDS(ON) than an equivalent N-channel device due to the lower hole mobility compared to electron mobility. However, P-channel MOSFETs simplify high-side switch designs because the gate can be driven relative to the source (connected to VCC), eliminating the need for a bootstrap circuit.

Pin Nombre Tipo Función
1 Fuente Potencia Source terminal (connected to VCC)
2 Fuente Potencia Source terminal (connected to VCC)
3 Fuente Potencia Source terminal (connected to VCC)
4 Puerta Entrada Gate terminal
5 Drenaje Potencia Drain terminal (connected to load)
6 Drenaje Potencia Drain terminal (connected to load)
7 Drenaje Potencia Drain terminal (connected to load)
8 Drenaje Potencia Drain terminal (connected to load)
  • Li-ion battery pack load switch with 30mOhm RDS(ON) and 5A rating
  • 5V to 3.3V LDO bypass switch with logic-level gate drive from MCU
  • DC-DC buck converter high-side switch with 30mOhm for 92%+ efficiency
  • USB power delivery reverse polarity protection at 5A
Fabricante Número de pieza Paquete Notas
Toshiba TPC8107 SOP-8 Lower RDS(ON) version
Infineon IRF9310TRPBF SOP-8 -30V, -6.5A, similar class
onsemi FDC653P SOT-223 -20V, -2A, smaller package
Vishay Si2333DS SOT-23 -12V, -3A, much smaller
Toshiba TPC8108 SOP-8 -30V, -6A, higher current
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Materialparts is a professional electronic component supplier based in Shenzhen, China, with over 20 years of global trading experience. We integrate component procurement, quality inspection, technical support, customized packaging, and global delivery services to provide one-stop supply chain solutions. Our business covers industrial control, automotive electronics, consumer electronics, medical devices and other industries. We always adhere to genuine sources, stable supply and considerate after-sales service.

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Address: Room 2919, Guoli Building, Huaqiang North, Futian District, Shenzhen, Guangdong, China
 

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