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S1M-E3/5AT

1000V 1A rectifier, 1.1V VF, 30A surge, SMA (DO-214AC)

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Pieza del fabricante：

S1M-E3/5AT

Paquete：

SMA / DO-214AC (5.2 x 2.6 mm)

Marca：
Categorías de productos：
Compromiso de calidad
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Descripción

Productos

The S1M-E3/5AT from Vishay is a 1000V, 1A glass-passivated surface-mount rectifier diode in an SMA (DO-214AC) package. With 1.1V forward voltage and 30A surge current capability, it provides reliable general-purpose rectification for power supply, inverter, and converter applications.

Especificaciones

Reverse Voltage (VRRM) 1000 V
Average Forward Current 1 A
Forward Voltage (VF) 1.1 V @ 1A
Reverse Recovery Time 1.8 μs
Peak Surge Current (IFSM) 30 A (8.3ms)
Reverse Leakage Current 5 μA @ 1000V
Junction Capacitance 12 pF @ 4V, 1MHz
Paquete SMA (DO-214AC)
Temperatura de funcionamiento -55°C to +150°C (Tj)

Características

  • 1000V reverse voltage rating for high-voltage rectification
  • Glass-passivated chip junction for reliable operation
  • Low 1.1V forward voltage drop at rated current
  • 30A peak surge current capability for inrush handling
  • 5mJ avalanche energy rating
  • AEC-Q101 qualified version available for automotive

Aplicaciones

  • General-purpose rectification in AC-DC power supplies
  • Freewheeling diode in inverter and converter circuits
  • Reverse polarity protection in high-voltage systems
  • High-voltage bridge rectifier configurations
  • Automotive and industrial power supply rectification

The S1M-E3/5AT from Vishay is a surface-mount glass-passivated standard recovery rectifier diode rated at 1000V reverse voltage and 1A average forward current. The glass-passivated chip junction construction provides reliable operation with low reverse leakage current of 5μA maximum at rated voltage. With a forward voltage drop of 1.1V at 1A and peak surge current capability of 30A (8.3ms half sine), the device is suitable for general-purpose rectification in power supplies, inverters, converters, and freewheeling diode applications. The SMA (DO-214AC) package provides a compact footprint for automated PCB assembly with MSL level 1 unlimited floor life.

The S1M-E3/5AT operates as a standard recovery P-N junction rectifier diode. (1) In forward bias (anode positive relative to cathode), current flows when the applied voltage exceeds the forward voltage threshold (approximately 0.7V for silicon), with the forward voltage reaching 1.1V at the rated 1A current. The glass-passivated junction construction ensures stable and reliable forward conduction characteristics. (2) In reverse bias (cathode positive), the P-N junction blocks current flow up to the 1000V reverse voltage rating, with only a small leakage current of 5μA maximum at 25°C. (3) The standard recovery characteristic (1.8μs reverse recovery time) means the diode is suitable for line-frequency rectification (50/60Hz) and low-frequency switching applications, but not for high-frequency switch-mode power supplies where fast or ultrafast recovery diodes are preferred.

Pin Nombre Función
1 Cátodo Negative terminal (marked with band on package)
2 Ánodo Positive terminal
  • AC-DC line-frequency rectification in offline power supplies
  • Freewheeling diode across inductive loads in relay and solenoid drivers
  • Reverse polarity protection for high-voltage DC power inputs
  • High-voltage bridge rectifier configurations in industrial power supplies
  • Automotive alternator rectification and protection circuits
Modelo Fabricante Diferencia clave
S1G-E3/5AT Vishay 400V, same current rating
S1J-E3/5AT Vishay 600V, same current rating
S1M-E3/61T Vishay Tape and reel alternative
US1M-E3/5AT Vishay Ultrafast recovery version
RS1M MDD 1000V, 1A, SMA equivalent
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Tel / WhatsApp: +86 13760382860

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Tel / WhatsApp: +86 13760382860
Address: Room 2919, Guoli Building, Huaqiang North, Futian District, Shenzhen, Guangdong, China
 

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