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K4B2G1646Q-BCK0

2Gb DDR3 SDRAM, 16Mx16, 1600Mbps PC3-12800, CL=11, 1.5V in FBGA-96

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Pieza del fabricante：

K4B2G1646Q-BCK0

Paquete：

FBGA-96 (8.00 x 13.00 x 1.00 mm)

Descripción

Productos

The K4B2G1646Q-BCK0 from Samsung is a 2Gb DDR3 SDRAM organized as 16M x 16 x 8 banks in an FBGA-96 (8x13mm) package. It operates at 1600Mbps (PC3-12800) with CL=11 latency and 1.5V supply, providing high-density volatile memory for computing and embedded applications.

Especificaciones

Storage Capacity	2Gb (256MB)
Organization	16M x 16 x 8 Banks
Interface	DDR3 SDRAM
Velocidad de datos	1600Mbps (PC3-12800)
Tensión de alimentación	1.5V (VDD/VDDQ)
Latencia CAS	11 (CL=11 @ 1600Mbps)
Refresh	8192 times / 64ms
Paquete	FBGA-96 (8 x 13mm)
Temperatura de funcionamiento	0°C ~ +85°C (Commercial)

Características

DDR3 SDRAM interface with 8n prefetch architecture
1600Mbps data rate for high-bandwidth applications
1.5V power supply with support for 1.35V operation
Programmable CAS latency (CL5, CL6, CL7, CL8, CL9, CL11)
On-die termination (ODT) for signal integrity
Write leveling for fly-by topology compliance
Asynchronous reset for initialization
Self-refresh mode for low-power operation

Aplicaciones

Desktop and laptop computer memory modules
Embedded computing and networking
Graphics frame buffers
Industrial computing systems
Digital signage and display systems

Introducción del producto:K4B2G1646Q-BCK0 Presentación del producto

The K4B2G1646Q-BCK0 from Samsung is a 2Gb (256MB) DDR3 SDRAM device organized as 16M words x 16 bits x 8 banks. It complies with the JEDEC DDR3 SDRAM standard and operates at a maximum data rate of 1600Mbps (PC3-12800). The device uses an 8n prefetch architecture that transfers 8 data words per clock cycle, enabling high bandwidth at moderate clock frequencies. The 1.5V supply voltage reduces power consumption compared to DDR2 (1.8V), while the 1.35V low-power option further reduces power for energy-conscious designs. On-die termination (ODT) eliminates the need for external termination resistors on the data lines, improving signal integrity. The FBGA-96 package provides a compact footprint suitable for memory module and on-board designs.

Principio de funcionamiento:K4B2G1646Q-BCK0 Principio de funcionamiento

The K4B2G1646Q uses a double data rate (DDR) architecture that transfers data on both the rising and falling edges of the clock, achieving twice the bandwidth of single-data-rate SDRAM at the same clock frequency. The 8n prefetch means that 8 data words are fetched from the DRAM array in parallel for each read or write command, and these are serialized over 4 clock cycles (8 data edges). The DDR3 protocol uses a fly-by topology for command/address signals with write leveling to compensate for flight time skew across the memory bus. On-die termination (ODT) provides programmable termination resistance (RTT) on DQ, DQS, and DM pins to match the transmission line impedance. Refresh is required 8192 times every 64ms to maintain data integrity. Self-refresh mode allows the DRAM to autonomously refresh its cells while consuming minimal power.

Descripción de la clavija:K4B2G1646Q-BCK0 Definición y funciones de las clavijas

Pin	Nombre	Función
A0-A9, A10/AP, A11, A12/BC	Address	Row/column address and auto-precharge/bank select
BA0-BA2	Bank Address	Selects one of 8 internal banks
CK/CK_n	Reloj	Differential clock input
CKE	Clock Enable	Enables internal clock and self-refresh
CS_n	Chip Select	Enables command decoder
RAS_n, CAS_n, WE_n	Command	Command inputs (row, column, write enable)
DQ0-DQ15	Data	Bidirectional data bus
DQS0-DQS1	Estroboscopio de datos	Differential data strobe for read/write
DM0-DM1	Data Mask	Write data mask
ODT	On-Die Termination	Enables internal termination resistance
RESET_n	Restablecer	Asynchronous reset (active low)

Application Scenarios:In which products and applications isK4B2G1646Q-BCK0 usado

Embedded Linux System Memory: 256MB capacity sufficient for embedded Linux rootfs and application memory; 1600Mbps provides 2.56GB/s bandwidth
Networking Equipment Buffer: High-bandwidth DDR3 interface buffers packet data at line rates up to 10Gbps
Industrial Computing: 1.5V DDR3 reduces power compared to DDR2; wide commercial temperature range suits controlled environments
Digital Signage Frame Buffer: 256MB stores uncompressed video frames for 1080p display pipeline

Alternative Models:What chips are recommended as replacements for K4B2G1646Q-BCK0

Modelo	Fabricante	Diferencia clave
K4B4G1646Q-BYK0	Samsung	4Gb (512MB), x16, DDR3, same package
MT41K256M16TW-107	Micron	4Gb, x16, DDR3L, 1600Mbps
H5TQ4G63CFR-RDC	SK Hynix	4Gb, x16, DDR3, 1600Mbps
EM68B16CWQH-25H	Etron	2Gb, x16, DDR3, 1600Mbps
IS43TR16128B-125KBL	ISSI	2Gb, x16, DDR3, 1600Mbps, industrial