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IRF540N

100V N-ch MOSFET, 44mR RDS(on), 33A, TO-220

13500

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Pieza del fabricante：

IRF540N

Paquete：

TO-220AB (15.60 x 10.40 x 4.60 mm)

Marca：
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Descripción

Productos

The IRF540N from Infineon (formerly International Rectifier) is a 100V N-channel power MOSFET with 0.044 Ohm RDS(on) at 10V gate drive and 33A continuous drain current in a TO-220 through-hole package.

Especificaciones

Tipo N-Channel Enhancement MOSFET
VDSS 100 V
ID 33 A (continuous @ TC=25°C)
RDS(on) 0.044 Ohm max @ VGS=10V
VGS(th) 2.0 to 4.0 V
Total Gate Charge 71 nC typical
Power Dissipation 130 W @ TC=25°C
Temperatura de funcionamiento -55°C to +175°C
Paquete TO-220AB (3-pin)

Características

  • 100V N-ch power MOSFET with ultra-low 44mOhm RDS(on) at 33A in TO-220
  • Industry-standard device for low-voltage high-current switching

Aplicaciones

  • Motor drive, solenoid and relay driver at 12-48V bus
  • DC-DC converter and battery management high-current switching

The IRF540N from Infineon is one of the most widely used N-channel power MOSFETs, offering 100V breakdown, 0.044 Ohm maximum on-resistance, and 33A continuous drain current in a TO-220 package. The extremely low RDS(on) of 44mOhm at VGS=10V minimizes conduction losses in high-current applications. At 33A, the conduction loss is only P = I2R = 332 x 0.044 = 48W. The 100V rating is well-suited for 12V, 24V, and 48V bus systems including automotive, industrial, and battery-powered applications. The N suffix denotes the improved version with lower RDS(on) than the original IRF540. The TO-220 package provides 130W dissipation with heatsink mounting. The 71nC gate charge requires a gate driver capable of delivering several hundred milliamps for fast switching, but allows operation up to 100-200kHz with appropriate drive.

The IRF540N is a planar N-channel enhancement-mode vertical DMOS power MOSFET. (1) Low RDS(on): At 100V, the drift region can be short and heavily doped, enabling the 44mOhm on-resistance. The large die area (approximately 30mm2) further reduces the specific on-resistance. (2) High Current: The 33A continuous rating at TC=25°C requires adequate heatsinking. In practical applications, the maximum current is thermally limited by the junction-to-ambient thermal resistance and the heatsink quality. (3) Body Diode: The integral body diode (anode at source, cathode at drain) has a forward voltage of approximately 1.3V and a reverse recovery time of several hundred nanoseconds. For synchronous rectification at high frequency, a Schottky diode in parallel with the body diode can reduce recovery losses. (4) Avalanche: The device is rated for single-pulse avalanche energy, providing robustness against voltage spikes from inductive loads that exceed the 100V breakdown.

Pin Nombre Función
1 G Puerta
2 D Drenaje
3 S Fuente
Pestaña D Drain (connected to case)
  • Motor drive and solenoid driver at 12-48V bus with 33A capability
  • DC-DC converter and battery management high-current switching at 100V
Fabricante Número de pieza Paquete Notas
Infineon IRF540 TO-220 Original version, higher Ron
onsemi FQA36P15 TO-220 P-ch complement
Vishay IRL540N TO-220 Logic-level gate, 100V
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