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IRF3205

55V N-ch MOSFET, 8mR RDS(on), 110A, TO-220

9800

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Pieza del fabricante：

IRF3205

Paquete：

TO-220AB (15.60 x 10.40 x 4.60 mm)

Descripción

Productos

The IRF3205 from Infineon (formerly International Rectifier) is a 55V N-channel power MOSFET with 0.008 Ohm RDS(on) at 10V gate drive and 110A continuous drain current in a TO-220 through-hole package, optimized for very low-voltage high-current applications.

Especificaciones

Tipo	N-Channel Enhancement MOSFET
VDSS	55 V
ID	110 A (continuous @ TC=25°C)
RDS(on)	0.008 Ohm max @ VGS=10V
VGS(th)	2.0 to 4.0 V
Total Gate Charge	146 nC typical
Power Dissipation	200 W @ TC=25°C
Temperatura de funcionamiento	-55°C to +175°C
Paquete	TO-220AB (3-pin)

Características

55V N-ch MOSFET with ultra-low 8mOhm RDS(on) and 110A in TO-220
Industry-standard device for automotive and very low-voltage switching

Aplicaciones

Automotive motor drive and battery disconnect at 12V/24V
High-current DC-DC converter synchronous rectifier

Introducción del producto:IRF3205 Presentación del producto

The IRF3205 from Infineon is an industry-standard 55V N-channel power MOSFET renowned for its ultra-low 8mOhm on-resistance, which minimizes conduction losses in very low-voltage high-current applications. The 110A continuous drain current rating at TC=25°C makes it suitable for automotive motor drives, battery management, and high-current DC-DC converters. At 12V bus voltage, the 55V rating provides more than 4x voltage margin for inductive spikes. The extremely low RDS(on) of 8mOhm means that at 50A, the conduction loss is only P = I2R = 502 x 0.008 = 20W. The 200W power dissipation rating with heatsink provides ample thermal margin. The large 146nC gate charge requires a robust gate driver, but is acceptable for switching frequencies up to approximately 50-100kHz in motor drive applications.

Principio de funcionamiento:IRF3205 Principio de funcionamiento

The IRF3205 is a planar N-channel enhancement-mode vertical DMOS power MOSFET optimized for ultra-low on-resistance. (1) Ultra-Low RDS(on): At only 55V breakdown, the drift region is very short and heavily doped, minimizing its contribution to RDS(on). The large die area (approximately 60mm2) with dense cell geometry further reduces the specific on-resistance to 8mOhm. (2) High Current: The 110A rating requires the TO-220 leads and internal wire bonds to carry very high current. In practice, the 110A rating is achievable only with excellent heatsinking (TC maintained near 25°C). Real-world current capability is limited by the thermal resistance from junction to ambient. (3) Gate Charge: The 146nC total gate charge reflects the large die area. A gate driver capable of 1-2A peak current is recommended for switching times under 100ns. At lower switching frequencies typical of motor drive (10-20kHz), the gate charge is not a significant limitation.

Descripción de la clavija:IRF3205 Definición y funciones de las clavijas