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FDD8424H

Dual N+P-ch MOSFET, 40V, 24/54mΩ, DPAK-5

3000

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Pieza del fabricante：

FDD8424H

Paquete：

DPAK-5 / TO-252-5 (6.73×6.22×2.39 mm, 4 leads + tab)

Descripción

Productos

The FDD8424H from onsemi is a dual complementary N and P-Channel enhancement mode PowerTrench MOSFET in a DPAK-5 package. The N-channel is rated 40V/20A with 24 mΩ max RDS(on), and the P-channel is rated -40V/-20A with 54 mΩ max RDS(on). Optimized for half-bridge, inverter, and H-bridge applications requiring complementary MOSFET pairs in a single package.

Especificaciones

Configuración	Dual complementary (1× N-ch + 1× P-ch)
N-Channel VDS	40V
P-Channel VDS	-40V
N-Channel ID	20A (TC=25°C); 9A (TA=25°C)
P-Channel ID	-20A (TC=25°C); -6.5A (TA=25°C)
N-Ch RDS(on) @ VGS=10V	24 mΩ max
N-Ch RDS(on) @ VGS=4.5V	30 mΩ max
P-Ch RDS(on) @ VGS=-10V	54 mΩ max
P-Ch RDS(on) @ VGS=-4.5V	70 mΩ max
N-Ch QG @ VGS=10V	14 nC typical
P-Ch QG @ VGS=-10V	24 nC typical
Ptot	3.1W (TA), 35W (TC) combined
Temperatura de funcionamiento	-55°C to +150°C
Paquete	DPAK-5 / TO-252-5

Características

Complementary N and P-channel in single DPAK-5 package
N-channel: 40V, 24 mΩ, low gate charge
P-channel: -40V, 54 mΩ, matched to N-channel
PowerTrench technology for low RDS(on) and fast switching
Common drain connection (pin 4) for half-bridge/inverter topology
RoHS compliant

Aplicaciones

Half-bridge and H-bridge motor drive
Class-D audio amplifier output stage
DC-DC converter push-pull stage
Battery-powered inverter circuits

Introducción del producto:FDD8424H Presentación del producto

The FDD8424H from onsemi is a dual complementary N and P-Channel PowerTrench MOSFET in a DPAK-5 package. The N-channel provides 40V/24 mΩ and the P-channel -40V/54 mΩ, with common drain connection for half-bridge topology. Ideal for motor drive H-bridges, Class-D audio amplifiers, and DC-DC converter push-pull stages.

Principio de funcionamiento:FDD8424H Principio de funcionamiento

The FDD8424H integrates one N-channel and one P-channel enhancement mode MOSFET in a single DPAK-5 package using onsemi’s PowerTrench technology. The common drain connection (pin 4, connected to the DPAK tab) is shared between both transistors, forming a natural half-bridge output node. The N-channel MOSFET (Q1) serves as the low-side or pull-down switch, while the P-channel (Q2) serves as the high-side or pull-up switch. In a typical half-bridge configuration, the load connects between the common drain (output) and a supply rail. The PowerTrench technology ensures low RDS(on) for both channels while maintaining fast switching with low gate charge. The complementary pairing eliminates the need for separate N and P-channel MOSFETs, reducing component count and board space.

Descripción de la clavija:FDD8424H Definición y funciones de las clavijas

Pin	Nombre	Tipo	Función
1	Q1 Source (N-ch)	Potencia	N-channel source terminal
2	Q1 Gate (N-ch)	Entrada	N-channel gate
3	Q2 Gate (P-ch)	Entrada	P-channel gate
4 (tab)	Common Drain	Potencia	Shared drain of both MOSFETs (output node)
5	Q2 Source (P-ch)	Potencia	P-channel source terminal

Application Scenarios:In which products and applications isFDD8424H usado

Half-bridge and H-bridge motor drive circuits
Class-D audio amplifier output stages
DC-DC converter push-pull and synchronous buck stages
Battery-powered inverter and UPS circuits

Alternative Models:What chips are recommended as replacements for FDD8424H

Fabricante	Número de pieza	Paquete	Notas
onsemi	FDS8424H	SOIC-8	Same die in SOIC-8, lower power
onsemi	FDD8424L	DPAK-5	Logic-level gate threshold version
onsemi	FDD8433H	DPAK-5	30V version, lower RDS(on)
Vishay	Si4948BEY	SOIC-8	Complementary dual MOSFET, alternative
Infineon	BSC026N04LS	SuperSO8	Single N-ch, higher performance option