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CSD16340Q3

25V N-Channel NexFET MOSFET, 25A, 3.7mΩ, SON 5x6, optimized for synchronous buck low-side

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Pieza del fabricante：

CSD16340Q3

Paquete：

SON 5x6 (0.5mm pitch)

Marca：
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Descripción

Productos

The CSD16340Q3 from Texas Instruments is an N-Channel NexFET Power MOSFET rated at 25V, 25A with an ultra-low RDS(on) of 3.7mΩ. Designed in a compact SON 5×6 package, it is optimized for synchronous buck converter low-side applications where low conduction loss and fast switching are critical.

Especificaciones

VDSS 25V
ID 25A
RDS(on) (typ) 3.7mΩ @VGS=4.5V
RDS(on) (max) 4.9mΩ @VGS=4.5V
VGS(th) 0.7V – 1.5V
Qg (typ) 7.5nC @VGS=4.5V
FOM (Qg×RDS(on)) 28 (typ)
Paquete SON 5×6 (0.5mm pitch)
Temperatura de funcionamiento -55°C to +150°C

Características

  • Ultra-low RDS(on) of 3.7mΩ for minimal conduction loss
  • Industry-leading Figure of Merit (FOM) of 28
  • Low gate charge of 7.5nC for fast switching
  • SON 5×6 package with 0.5mm pitch for compact layout
  • Logic-level gate drive compatible

Aplicaciones

  • DC-DC synchronous buck converters (low-side)
  • Point-of-load (POL) power modules
  • Server and telecom power supplies
  • Motor drive and load switches

The CSD16340Q3 is a 25V N-Channel NexFET power MOSFET from Texas Instruments, engineered for high-efficiency synchronous buck converter applications. With an ultra-low RDS(on) of 3.7mΩ and gate charge of just 7.5nC, it delivers an industry-leading Figure of Merit (FOM) of 28, enabling superior power conversion efficiency. The SON 5×6 package with 0.5mm pitch provides excellent thermal performance in a compact footprint, making it ideal for space-constrained power supply designs.

The CSD16340Q3 operates as an N-Channel enhancement-mode MOSFET. When a gate-source voltage above the threshold (0.7-1.5V) is applied, the conductive channel forms, allowing current to flow from drain to source. The NexFET trench technology minimizes RDS(on) to 3.7mΩ, dramatically reducing conduction losses (I²R). The low gate charge (7.5nC) enables fast switching transitions, minimizing switching losses during PWM operation. In synchronous buck topology, it serves as the low-side switch, replacing the Schottky diode to achieve higher efficiency by eliminating the diode forward voltage drop.

Pin Nombre Descripción
1 Fuente Source terminal / Power ground
2 Puerta Gate control input
3 Drenaje Drain terminal / Power output
Tampón Drenaje Exposed thermal pad (Drain)
  • DC-DC synchronous buck converters (low-side MOSFET)
  • Point-of-load (POL) power modules for servers and telecom
  • Motor drive H-bridge configurations
  • Battery-powered portable device power management
Modelo Fabricante VDSS RDS(on) Paquete
CSD16325Q5 TI 25V 2.6mΩ SON 5×6
CSD17573Q5B TI 30V 3.2mΩ SON 5×6
SI7860DP Vishay 30V 4.2mΩ PowerPAK SO-8
FDD8580 onsemi 30V 5.8mΩ SO-8
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