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BSS138

N-ch logic-level MOSFET, 60V, 220mA, 3.5Ω, Vth 0.8V, SOT-23

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Pieza del fabricante：

BSS138

Paquete：

SOT-23 (2.9×1.3×1.0 mm, 1.9mm pitch)

Marca：
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Compromiso de calidad
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Descripción

Productos

The BSS138 from Nexperia is an N-channel enhancement mode logic-level MOSFET in a SOT-23 package. With 60V drain-source voltage, 220 mA continuous drain current, and a low gate threshold voltage of 0.8-1.5V, it is specifically designed for level shifting in I2C, SPI, and UART communication between 1.8V and 5V logic domains. It is the most popular MOSFET for bidirectional voltage translation.

Especificaciones

Tipo N-Channel Enhancement MOSFET
VDS 60V
VGS ±20V
ID (Continuous) 220 mA @ 25°C
RDS(ON) 3.5Ω max @ VGS=10V, ID=200 mA
VGS(th) 0.8V to 1.5V
Gate Charge 2.5 nC (typical)
Power Dissipation 360 mW (FR-4 PCB)
Temperatura de funcionamiento -55°C to +150°C (junction)
Paquete SOT-23 (TO-236AB)

Características

  • Very low gate threshold: 0.8V min for sub-1.8V logic compatibility
  • Logic-level drive from 1.8V, 2.5V, 3.3V, and 5V domains
  • Low gate charge: 2.5 nC for fast switching
  • ESD protection on gate
  • Trench MOSFET technology
  • AEC-Q101 qualified version available
  • Industry-standard SOT-23 (G-S-D) pinout

Aplicaciones

  • I2C, SPI, and UART bidirectional level shifting
  • 1.8V to 3.3V and 3.3V to 5V voltage translation
  • Low-side load switching in portable devices
  • Logic gate and signal routing
  • Battery-powered switching circuits

The BSS138 from Nexperia is an N-channel enhancement mode logic-level MOSFET optimized for bidirectional level shifting in communication interfaces. With an ultra-low gate threshold of 0.8-1.5V, it enables voltage translation between 1.8V, 2.5V, 3.3V, and 5V logic domains for I2C, SPI, and UART buses. The SOT-23 package and 60V/220mA rating make it the most widely used MOSFET for logic level conversion.

The BSS138 operates as an N-channel enhancement MOSFET with a very low gate threshold (0.8V minimum). In a typical level shifter circuit, two BSS138s are connected with drains tied to the high-voltage side (via pull-ups) and sources to the low-voltage side (via pull-ups). When one side pulls low, the MOSFET’s body diode conducts, pulling the gate below threshold and turning on the MOSFET, which then pulls the other side low as well. This bidirectional pass-gate operation enables transparent voltage translation without directional control signals. The low VGS(th) ensures the MOSFET turns on even with 1.8V logic.

Pin Nombre Tipo Función
1 Puerta Entrada MOSFET gate (drive from 1.8V to 10V)
2 Fuente Potencia MOSFET source (typically lower voltage side)
3 Drenaje Salida MOSFET drain (typically higher voltage side)
  • I2C bidirectional level shifting between 1.8V/3.3V/5V domains
  • SPI and UART voltage translation in mixed-voltage systems
  • 1.8V to 3.3V sensor interface level conversion
  • Low-side load switching in battery-powered portable devices
  • Logic gate signal routing and bus isolation
Fabricante Número de pieza Paquete Notas
ON Semiconductor BSS138LT1G SOT-23 Direct equivalent from onsemi
Nexperia 2N7002K SOT-23 Higher ID (300mA), higher Vth
Nexperia BSS138AKA SOT-23 AEC-Q101 qualified version
Diodos Inc BSS138-7-F SOT-23 Direct equivalent from Diodes Inc
TI TXB0108PWR TSSOP-20 8-channel auto-direction level shifter IC
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