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BSS123LT1G

N-CH MOSFET, 100V, 170mA, 6Ω, SOT-23, AEC-Q101

35000

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Pieza del fabricante：

BSS123LT1G

Paquete：

SOT-23-3 / TO-236-3 (2.9 x 1.3 x 0.94 mm)

Marca：
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Descripción

Productos

The BSS123LT1G is an onsemi N-channel enhancement-mode logic-level MOSFET with 100V VDS, 170mA ID, 6Ω RDS(on) at 10VGS, and SOT-23 package. AEC-Q101 qualified, Pb-free, RoHS compliant.

Especificaciones

VDS 100 V
ID 170 mA continuous
RDS(on) 6 Ω max @ VGS=10V
VGS(th) 1.6 V to 2.6 V
Qg 1.8 nC typical
Paquete SOT-23-3 (TO-236)

Características

  • 100V drain-source voltage
  • Logic-level gate threshold (1.6-2.6V)
  • 6Ω RDS(on) at 10VGS
  • AEC-Q101 qualified
  • 1.8nC low gate charge for fast switching
  • Pb-free, RoHS compliant

Aplicaciones

  • Low-power switching
  • Level translation
  • Gate driver for power MOSFETs
  • Load switching and relay replacement

The BSS123LT1G is an onsemi N-channel enhancement-mode logic-level power MOSFET in a SOT-23-3 surface-mount package. The device features 100V drain-source voltage, 170mA continuous drain current, and 6Ω maximum RDS(on) at VGS=10V, making it suitable for low-power switching and signal steering applications. The logic-level gate threshold voltage of 1.6V to 2.6V enables direct drive from 3.3V and 5V microcontroller GPIOs without a gate driver. The 1.8nC typical total gate charge allows fast switching at high frequencies with minimal gate drive power. The 225mW power dissipation rating is adequate for the low current levels typical of signal switching applications. The AEC-Q101 qualification (BVSS123LT1G variant) makes the device suitable for automotive applications. The SOT-23-3 footprint provides a compact solution for space-constrained designs. The LT1G suffix denotes SOT-23 package, 3000-unit tape-and-reel, Pb-free finish. Common applications include level translation, gate driver pre-driver, relay replacement, and small servo motor control.

The BSS123 is an N-channel enhancement-mode MOSFET fabricated using onsemi high cell density DMOS technology. When VGS exceeds the threshold voltage (1.6-2.6V), an inversion layer forms in the P-body region beneath the gate oxide, creating a conductive channel between drain and source. The channel resistance (RDS(on)) depends on VGS: at VGS=10V, the channel is fully enhanced with RDS(on) ≤ 6Ω; at VGS=4.5V (logic level), RDS(on) increases to ≤ 10Ω. When VGS drops below the threshold, the inversion layer disappears and the channel is pinched off, blocking drain current up to 100V. The low 1.8nC gate charge means the gate capacitance can be charged and discharged quickly by a microcontroller GPIO, enabling switching speeds of tens of nanoseconds. The body diode between source and drain conducts when VDS is negative, providing a natural freewheeling path for inductive loads.

Pin Mnemonic Descripción
1 Puerta Gate control input
2 Fuente Source terminal
3 Drenaje Drain terminal
  • 3.3V MCU GPIO driving 12V relay coil through BSS123 as low-side switch
  • I2C level translation from 3.3V to 5V using BSS123 as open-drain pass transistor
  • Power MOSFET gate pre-driver with 1.8nC gate charge for fast PWM switching
  • Battery-powered load switch with 1µA gate leakage ensuring minimal standby drain
Modelo Fabricante Diferencia clave
2N7002LT1G onsemi 60V, 115mA, same package
BSS138LT1G onsemi 50V, 220mA, lower VGS(th)
DMN2075U Diodos Inc 20V, 750mA, lower RDS(on)
BVSS123LT1G onsemi AEC-Q101 automotive qualified
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