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BAT54JFILM

Dual Schottky common cathode, 30V/200mA, 0.32V VF, SC-70

18000

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Pieza del fabricante：

BAT54JFILM

Paquete：

3-Pin SOT-323 / SC-70 (2.0 x 1.25 x 0.9 mm)

Marca：
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Descripción

Productos

The BAT54JFILM is an NXP (now Nexperia) Schottky diode array with common cathode configuration, 30V reverse voltage, 200mA per diode, and 0.32V forward voltage. Packaged in SOT-323 (SC-70), -65C to +150C.

Especificaciones

Configuración Dual common cathode
VRRM 30 V
IF 200 mA per diode
VF 0.32 V typical @ 10mA
IR 2 uA max
Paquete SOT-323 (SC-70)

Características

  • Dual common cathode Schottky
  • 30V reverse voltage rating
  • 200mA continuous current
  • 0.32V low forward voltage
  • 2uA low reverse leakage
  • SOT-323 (SC-70) package

Aplicaciones

  • DC-DC converter rectification
  • OR-ing and power steering
  • Signal clipping and clamping
  • Reverse polarity protection

The BAT54JFILM is a Nexperia (formerly NXP) dual common-cathode Schottky diode array in a SOT-323 (SC-70) surface-mount package. Two Schottky diodes share a common cathode connection, making the device ideal for OR-ing power supply configurations, logic-level clamping, and DC-DC converter output rectification where two diodes are needed in a compact footprint. The 30V reverse voltage rating supports 5V and 12V power rail applications. The 0.32V typical forward voltage at 10mA (0.5V max at 1mA) minimizes conduction losses compared to silicon PN junction diodes (0.6-0.7V). The 2uA maximum reverse leakage current at 25C ensures minimal power loss when reverse-biased. The 200mA per-diode continuous current rating handles moderate power supply and signal conditioning loads. The JFILM suffix indicates the SOT-323 package, lead-free, and automotive-grade screening. The SC-70 package occupies only 2.5mm2 of board area, 40% less than SOT-23. Rated for -65C to +150C junction temperature.

The BAT54J contains two Schottky barrier diodes with their cathodes connected together at pin 2. A Schottky diode is formed by the junction of a metal (typically platinum silicide or titanium tungsten) and lightly-doped N-type silicon. Unlike a PN junction diode, a Schottky diode operates with majority carrier conduction – electrons cross the metal-semiconductor barrier without minority carrier storage. This eliminates the reverse recovery charge and recovery time that limits PN diode switching speed. The lower barrier height (0.25-0.35V for PtSi, 0.45-0.55V for TiW) results in the lower forward voltage drop compared to silicon PN diodes. The trade-off is higher reverse leakage current (exponentially increasing with temperature) and lower reverse voltage rating compared to PN diodes. In OR-ing applications, two BAT54J diodes connect the cathode to the load and the anodes to two power sources, with the higher-voltage source forward-biasing its diode and supplying the load.

Pin Mnemonic Descripción
1 Anode 1 Anode of diode 1
2 Cátodo Common cathode
3 Anode 2 Anode of diode 2
  • Dual power supply OR-ing with common cathode for redundant 5V/12V supply selection
  • DC-DC converter output rectification with 0.32V forward drop for high efficiency
  • Signal clipping and clamping with fast Schottky switching and low capacitance
  • Reverse polarity protection for moderate current (200mA) signal paths
Modelo Fabricante Diferencia clave
BAT54S Nexperia SOT-23, common cathode
BAT54C Nexperia SOT-23, common anode
BAT54A Nexperia SOT-23, series pair
RB521S30 Rohm Similar dual Schottky
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