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DMN10H220L-7

100V N-ch MOSFET, 1.6A, 220mOhm@10V, 8.3nC Qg, SOT-23-3 T/R, low-cost load switch

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Manufacturer Part：

DMN10H220L-7

Package：

SOT-23-3 (2.9 x 1.3 x 0.98 mm, gull-wing)

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Description

The DMN10H220L-7 from Diodes Incorporated is a 100V N-channel enhancement-mode power MOSFET in a 3-pin SOT-23 package with tape-and-reel packaging. It features 220 mOhm max RDS(on) at VGS=10V, 1.6A continuous drain current, 8.3 nC typical gate charge at 10V, 401 pF input capacitance, 1.3W power dissipation, and threshold voltage of 2.5V max. Fast switching speed with 6.8ns turn-on delay and 8.2ns rise time. Halogen-free, antimony-free, and RoHS compliant. Operating temperature range is -55C to +150C. Marking code: N1H.

The DMN10H220L-7 from Diodes Incorporated is a 100V N-channel enhancement-mode power MOSFET in the compact SOT-23-3 surface-mount package with tape-and-reel packaging (3000 units/reel). The -7 suffix denotes tape-and-reel format.

The device is designed to minimize on-state resistance while maintaining superior switching performance, making it ideal for high-efficiency power management applications. The 220 mOhm maximum RDS(on) at VGS=10V (250 mOhm at 4.5V) is competitive for a 100V MOSFET in the tiny SOT-23 package, providing sufficient current handling for low-power DC-DC converters, load switches, and backlight drivers.

The 1.6A continuous drain current rating at 25C ambient and 1.3W power dissipation make the device suitable for space-constrained applications where larger MOSFET packages cannot fit. The 8A pulsed drain current provides margin for inrush current handling in load-switch applications.

The 8.3 nC typical gate charge at 10V (4.1 nC at 4.5V) enables efficient switching with low drive power, suitable for high-frequency DC-DC conversion up to several hundred kHz. The 401 pF input capacitance is moderate for this voltage rating.

The maximum threshold voltage of 2.5V at 250 uA allows the device to be driven from 3.3V or 5V logic, though full enhancement (lowest RDS(on)) requires 10V gate drive. At 4.5V gate drive, RDS(on) increases to 250 mOhm, still acceptable for many low-current applications.

Fast switching characteristics include 6.8 ns turn-on delay, 8.2 ns rise time, 7.9 ns turn-off delay, and 3.6 ns fall time (all typical), making the device suitable for high-frequency switching applications.

The DMN10H220L series also includes variants: DMN10H220LVT-7 (SOT-23-3, higher current rating of 2.24A with improved RDS(on)), and DMN10H220LE (SOT-89, higher current and power). The DMN10H220LQ-7 is the AEC-Q101 qualified automotive version.

**N-Channel Enhancement MOSFET:** The DMN10H220L uses vertical DMOS (Double-diffused MOS) technology. Current flows vertically from the source (top) through the channel to the drain (bottom). When VGS exceeds the threshold voltage (1.0-2.5V), an inversion layer forms under the gate oxide, creating a conductive N-type channel between source and drain. RDS(on) decreases with increasing VGS as the channel becomes more enhanced.

**SOT-23-3 Pinout:** The 3-pin SOT-23 package assigns pin 1 to gate, pin 2 to source, and pin 3 to drain. This simple pinout is standard for small-signal and low-power MOSFETs but lacks the multi-pin source/drain connections of larger packages, resulting in higher package parasitic inductance and resistance.

**100V Rating:** The 100V VDS rating makes this device suitable for 48V nominal systems (48V + 40% tolerance = 67V, leaving 33V margin). Applications include telecom (48V), automotive (12V/24V battery), and industrial (24V/48V bus) power management.

**Body Diode:** The inherent body diode from source to drain (anode at source, cathode at drain) has a typical forward voltage of approximately 0.9-1.2V. This diode conducts during dead-time in bridge configurations but is not designed for continuous current rectification.

Pin Name Type Description
1 Gate I Gate input; VGS(th) 1.0-2.5V; VGS max +/-16V; 8.3nC gate charge@10V; drive from MCU GPIO or gate driver through series resistor (10-100 Ohm); must not float
2 Source P/G Source terminal; typically connects to GND for low-side switching; body diode anode; 1.6A continuous current
3 Drain O Drain terminal; 100V max VDS; 220mOhm RDS(on)@10V; connects to load or inductor; primary thermal path; solder to copper pour
Application Description
Low-Side Load Switch Low-side power switch for 12V/24V/48V rails; MCU GPIO drives gate through 10kOhm resistor; 220mOhm@10V gives 352mV drop at 1.6A; SOT-23 footprint fits in space-constrained designs
DC-DC Converter Switch Low-side MOSFET in 48V-input buck converter at 100-300kHz; 8.3nC Qg allows efficient switching from gate driver IC; 100V rating provides 2x margin for 48V systems
LED Backlight Driver Switching element in LED backlight boost converter; fast 8.2ns rise time supports high PWM frequency; low Qg minimizes driver power; SOT-23 fits behind display panels
Model Manufacturer Compatibility Key Difference
DMN10H220LVT-7 Diodes Inc Higher Current Variant Same 100V/220mOhm in SOT-23-3; 2.24A (40% higher); improved RDS(on)@4.5V; drop-in compatible; use when higher current needed
FDD8424L onsemi Competitive Alternative 100V N-ch; 1.7A; 220mOhm@10V; SOT-23-3; similar specs; onsemi-sourced
BSS123 Nexperia Lower Voltage Alternative 100V N-ch; 0.17A; 6 Ohm; SOT-23; much higher RDS(on); much lower current; use only for logic-level switching, not power
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Certification
We have obtained a number of professional certifications and built our own professional testing laboratory.This ensures that every product we deliver to our customers meets the highest quality requirements.We conduct tests in strict accordance with procedures to ensure stable product quality and accurate parameters.To guarantee genuine original parts, we also cooperate with reliable third-party testing institutions for strict quality inspection.We always attach great importance to quality and fully comply with industry standards, relevant regulations, and ISO 9001:2015 requirements.

Shipping & Payment

All electronic components we source from our partnered supply chains go through strict incoming inspections.Through careful testing, we ensure everything delivered to customers is genuine original parts and meets quality requirements.In addition, we keep complete inspection records to make the entire supply chain process clear and traceable.

Certification
We have obtained a number of professional certifications and built our own professional testing laboratory.This ensures that every product we deliver to our customers meets the highest quality requirements.We conduct tests in strict accordance with procedures to ensure stable product quality and accurate parameters.To guarantee genuine original parts, we also cooperate with reliable third-party testing institutions for strict quality inspection.We always attach great importance to quality and fully comply with industry standards, relevant regulations, and ISO 9001:2015 requirements.

Service & Packaging

All electronic components we source from our partnered supply chains go through strict incoming inspections.Through careful testing, we ensure everything delivered to customers is genuine original parts and meets quality requirements.In addition, we keep complete inspection records to make the entire supply chain process clear and traceable.

Certification
We have obtained a number of professional certifications and built our own professional testing laboratory.This ensures that every product we deliver to our customers meets the highest quality requirements.We conduct tests in strict accordance with procedures to ensure stable product quality and accurate parameters.To guarantee genuine original parts, we also cooperate with reliable third-party testing institutions for strict quality inspection.We always attach great importance to quality and fully comply with industry standards, relevant regulations, and ISO 9001:2015 requirements.

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