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DMG2305UX-7

-30V P-ch MOSFET, 55mOhm, -4.1A, SOT-23-3

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Manufacturer Part：

DMG2305UX-7

Package：

3-Pin SOT-23 (2.9 x 1.6 x 1.0 mm)

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Description

Product Overview

The DMG2305UX-7 is a Diodes Incorporated P-channel enhancement mode MOSFET with -20V VDS, -4.2A drain current, 48mOhm RDS(on) max at -4.5V, and 1.2W power dissipation. Packaged in SOT-23-3, -55C to +150C.

Key Specifications

VDS -20 V
RDS(on) max 48 mOhm @ Vgs=-4.5V
ID -4.2 A
Vgs(th) -0.7V to -1.5V
Qg 6.5 nC typ
Pd 1.2 W
Package SOT-23-3

Features

  • -20V P-channel MOSFET
  • 48mOhm max RDS(on) at -4.5V
  • 4.2A continuous drain current
  • Low threshold voltage (-0.7V to -1.5V)
  • 6.5nC low gate charge
  • SOT-23-3 compact footprint
  • RoHS compliant

Applications

  • Battery power management
  • Load switches and high-side switching
  • DC-DC converter P-channel switch
  • Portable device power control

The DMG2305UX-7 is a Diodes Incorporated P-channel enhancement-mode power MOSFET in a compact SOT-23-3 package. The device features a -30V drain-source voltage rating and -4.1A continuous drain current with 55 mOhm typical on-resistance at VGS=-10V. The low threshold voltage (VGS(th) of -0.9V typical) enables direct logic-level gate drive from 2.5V and 3.3V microcontrollers. The tiny SOT-23-3 footprint makes it ideal for load switches, battery protection, and power routing in space-constrained portable devices. The low gate charge (7.8 nC typical) supports switching frequencies up to several hundred kHz with minimal gate drive loss. The device provides a cost-effective solution for high-side switching applications where an N-channel MOSFET would require a bootstrap gate drive circuit.

The DMG2305UX-7 operates as a voltage-controlled P-channel MOSFET switch. When the gate-source voltage (VGS) is sufficiently negative (below the threshold of approximately -0.9V), an inversion layer forms in the N-body region beneath the gate oxide, creating a conduction channel between source and drain. The drain current flows from source to drain (conventional current direction) when the MOSFET is enhanced. The on-resistance (RDS(on) of 55 mOhm at VGS=-10V) determines the conduction loss during the on-state. For high-side switching, the source is connected to the supply rail and the drain to the load; pulling the gate low relative to the source turns the MOSFET on. The body diode (inherent PN junction from source to drain) provides a conduction path when VSD is positive, which can serve as a free-wheeling diode in battery charging circuits.

Pin Mnemonic Description
1 Gate Gate terminal
2 Source Source terminal
3 Drain Drain terminal
  • 3.3V MCU-controlled high-side load switch for peripheral power gating with logic-level VGS(th)
  • Li-ion battery reverse polarity protection with body diode blocking and -30V rating
  • USB power switch in portable device with 55mOhm RDS(on) minimizing voltage drop
  • Battery charging/discharging path selection in handheld electronics with SOT-23 footprint
Model Manufacturer Key Difference
SI2305DS-T1-GE3 Vishay -20V, -2.8A, SOT-23-3
DMP3098L-7 Diodes Inc -30V, -3.6A, SOT-23-3
AO3401A AOS -30V, -4.0A, SOT-23-3
IRLML6401TRPBF Infineon -12V, -3.8A, SOT-23-3
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