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BSZ097N04LSG

40V N-channel OptiMOS 4 MOSFET, 9.7mΩ RDS(on), 100A, SuperSO8 package

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Manufacturer Part：

BSZ097N04LSG

Package：

SuperSO8 (5.0 x 6.0 x 0.9 mm with exposed pad)

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Description

Product Overview

The BSZ097N04LSG is an Infineon OptiMOS 4 N-channel power MOSFET rated at 40 V and 9.7 mΩ on-resistance (maximum). It is optimized for high-current synchronous rectification and switching applications, featuring a 100 A continuous drain current rating and very low figure of merit (FOM). The device is packaged in a SuperSO8 (5 x 6 mm) package with an exposed pad for thermal enhancement.

Key Specifications

VDS 40 V
RDS(on) (max) 9.7 mΩ
ID (continuous) 100 A
Qg (typ) 50 nC
Technology OptiMOS 4
Package SuperSO8

Features

  • OptiMOS 4 technology
  • Very low RDS(on): 9.7 mΩ max
  • High current rating: 100 A
  • Low gate charge for efficient switching
  • Exposed pad for thermal enhancement
  • Industrial temperature range

Applications

  • Synchronous rectification in DC-DC converters
  • Motor drive and inverters
  • Battery management systems
  • Solar inverter power stages

The BSZ097N04LSG is an Infineon OptiMOS 4 N-channel power MOSFET featuring 40 V drain-source voltage and 9.7 mΩ maximum on-resistance. The OptiMOS 4 technology delivers industry-leading figure of merit for low-voltage power applications, enabling high efficiency in synchronous rectification and switching topologies. The device supports 100 A continuous drain current and is packaged in a thermally-enhanced SuperSO8 package with exposed pad for optimal heat dissipation. Low gate charge (50 nC typical) enables efficient high-frequency switching.

The BSZ097N04LSG operates as an N-channel enhancement-mode power MOSFET. When gate-source voltage exceeds the threshold (typically 1-2 V), the inversion channel forms in the P-body region, allowing current to flow from drain to source through the N-drift region. The OptiMOS 4 trench technology minimizes the specific on-resistance by optimizing the cell pitch and trench depth, achieving 9.7 mΩ RDS(on). The charge balance structure in the drift region reduces the gate-drain charge (Qgd), improving switching efficiency. The body diode inherent in the vertical MOSFET structure can conduct reverse current during dead-time in synchronous rectification applications.

Pin Mnemonic Description
1 Source Source terminal
2 Gate Gate terminal
3-8 Drain Drain terminal (tab and pins)
  • Synchronous rectification in server and telecom DC-DC converters at 9.7 mΩ conduction loss
  • Motor drive half-bridge and three-phase inverter power stages
  • Battery management system high-current switching and protection
  • Solar micro-inverter and optimizer power stages
Model Manufacturer Key Difference
BSZ014N04LS6 Infineon 14 mΩ, lower cost
IRLHM630 Infineon Similar 40V OptiMOS
CSD19531Q5A TI NexFET 40V, 9.7 mΩ
FDMS86201 onsemi PowerTrench 40V, 10 mΩ
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Contact Information

Email: info@materialparts.com

Tel / WhatsApp: +86 13760382860

Service & Packaging

Materialparts is a professional electronic component supplier based in Shenzhen, China, with over 20 years of global trading experience. We integrate component procurement, quality inspection, technical support, customized packaging, and global delivery services to provide one-stop supply chain solutions. Our business covers industrial control, automotive electronics, consumer electronics, medical devices and other industries. We always adhere to genuine sources, stable supply and considerate after-sales service.

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Contact Information

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Address: Room 2919, Guoli Building, Huaqiang North, Futian District, Shenzhen, Guangdong, China
 

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