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BSS138K

N-channel logic-level MOSFET, 50V/220mA, 3.5Ohm RDS(ON) @2.5V, 1.3V VGS(th) in SOT-23-3

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Manufacturer Part：

BSS138K

Package：

SOT-23-3 (2.90 x 1.30 x 1.00 mm)

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Description

Product Overview

The BSS138K from Nexperia (NXP) is an N-channel enhancement-mode logic-level MOSFET in a SOT-23-3 package. It features 50V drain-source voltage, 220mA continuous drain current, and low gate threshold voltage of 1.3V typical, making it ideal for low-voltage switching and logic-level load driving applications.

Key Specifications

Type N-Channel Enhancement-Mode MOSFET
Drain-Source Voltage (VDSS) 50V
Continuous Drain Current (ID) 220mA
RDS(ON) 3.5Ohm (Max) @ VGS=2.5V
Gate Threshold Voltage (VGS(th)) 1.3V (Typical)
Power Dissipation 380mW @ TA=25°C
Package SOT-23-3 (2.90 x 1.30mm)
Operating Temperature -55°C ~ +150°C

Features

  • Logic-level gate drive (1.3V typical threshold) for direct MCU control
  • Low gate charge for fast switching
  • Low RDS(ON) of 3.5Ohm at VGS=2.5V for 1.8V/2.5V logic compatibility
  • Compact SOT-23-3 surface-mount package
  • 50V drain-source rating for general-purpose switching
  • Low gate capacitance for minimal drive current

Applications

  • I2C and SPI level translation
  • Low-voltage load switching
  • Logic-level signal routing
  • Battery-powered device power gating
  • LED and small relay driver

The BSS138K from Nexperia is an N-channel enhancement-mode small-signal MOSFET designed for low-voltage switching and level translation applications. The 1.3V typical gate threshold voltage enables direct drive from 1.8V, 2.5V, or 3.3V logic, making it one of the most popular MOSFETs for I2C and SPI bidirectional level translation circuits. The 50V drain-source voltage rating and 220mA continuous drain current provide sufficient capability for general-purpose switching of small loads. The low RDS(ON) of 3.5Ohm maximum at VGS=2.5V ensures acceptable voltage drop when driven from low-voltage logic. The SOT-23-3 package provides a compact footprint for dense PCB layouts. The BSS138 is the industry-standard choice for open-drain bidirectional level translation in I2C, SMBus, and 1-Wire interfaces.

The BSS138K operates as a voltage-controlled switch. When the gate-source voltage (VGS) exceeds the threshold voltage (1.3V typical), an inversion layer forms under the gate oxide, creating an N-type channel that allows current to flow from drain to source. The RDS(ON) of 3.5Ohm at VGS=2.5V represents the channel resistance when fully enhanced. For level translation applications, the MOSFET is connected with drain tied to the lower-voltage side and source tied to the higher-voltage side, with gate tied to the lower-voltage supply. When the lower-voltage side drives high, the VGS exceeds the threshold and the MOSFET conducts, pulling the higher-voltage side low through the channel. When the higher-voltage side drives low, the body diode conducts first, then the VGS rises above threshold and the MOSFET enhances, pulling the lower-voltage side low. This bidirectional conduction enables I2C level translation.

Pin Name Function
1 G Gate – control input
2 S Source
3 D Drain
  • I2C Level Translation: Bidirectional translation between 3.3V and 5V I2C buses using open-drain MOSFET with pull-up resistors on each side
  • 1.8V to 3.3V SPI Translation: 1.3V threshold enables operation from 1.8V logic; SOT-23-3 footprint allows placement near connector
  • Battery Power Gating: Logic-level gate drive from MCU GPIO controls battery connection to subsystem with low RDS(ON) loss
  • LED Indicator Driver: 220mA capability drives high-brightness indicator LEDs from 1.8V/2.5V MCU GPIO
Model Manufacturer Key Difference
BSS138 Nexperia Standard version (K is automotive qualified)
2N7002K Nexperia 60V/300mA, SOT-23, higher voltage
DMN2075U Diodes Inc 20V/750mA, very low RDS(ON), SOT-23
BSS84 Nexperia P-channel complement, -50V/-130mA
AO3400A Alpha & Omega 30V/5A, very low RDS(ON), SOT-23
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