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BSS123TA

N-channel 100V 170mA Trench MOSFET, SOT-23, logic-level gate, high-speed switching

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Manufacturer Part：

BSS123TA

Package：

SOT-23 (TO-236AB) 3.0 x 1.4 x 1.1 mm

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Description

Product Overview

The BSS123TA from Nexperia is an N-channel enhancement-mode Trench MOSFET rated at 100V/170mA in SOT-23 package, designed for high-speed switching applications.

Key Specifications

Type N-Channel Enhancement MOSFET
VDS 100 V
VGS +/-20 V
ID (continuous) 150-170 mA
RDS(ON) 5.0-6.0 Ohm @ VGS=10V
VGS(th) 0.8-2.0 V
Pd 225-360 mW
Input Capacitance 23-29 pF
Gate Charge 2.5 nC @ 10V
Turn-on Delay 8 ns typical
Turn-off Delay 13 ns typical
Technology TrenchMOS
Package SOT-23 (TO-236AB)
Operating Temperature -55 to +150 C

Features

  • Logic-level gate drive compatible
  • Fast switching with 8ns turn-on delay
  • TrenchMOS technology for low RDS(ON)
  • Small SOT-23 footprint (3.0 x 1.4 x 1.1mm)

Applications

  • High-speed line drivers
  • Relay and solenoid drivers
  • Low-power switching circuits
  • Level shifting and interface circuits

The BSS123TA from Nexperia (formerly NXP) is an N-channel enhancement-mode Trench MOSFET in SOT-23 (TO-236AB) surface-mount package. Rated at 100V drain-source voltage and 150-170mA continuous drain current, it features a low 5.0-6.0 Ohm RDS(ON) at VGS=10V and logic-level gate threshold (0.8-2.0V) enabling direct drive from 3.3V and 5V microcontrollers. The TrenchMOS technology provides fast switching with only 8ns turn-on and 13ns turn-off delay times. The ultra-compact SOT-23 package (3.0 x 1.4 x 1.1mm) makes it ideal for space-constrained designs. Note: This device is NRND (Not Recommended for New Designs) – consider BSS138 or 2N7002 as alternatives for new projects.

The BSS123TA operates as an N-channel enhancement-mode MOSFET. (1) In the off state, with VGS below the threshold voltage (0.8-2.0V), no conductive channel exists between drain and source. The device blocks up to 100V drain-source voltage with leakage current below 100nA. (2) When VGS exceeds the threshold, an inversion layer forms beneath the gate oxide, creating a conductive channel between drain and source. The channel resistance (RDS(ON)) is 5.0-6.0 Ohm at VGS=10V. At logic-level gate drive (VGS=4.5V), RDS(ON) increases moderately but remains suitable for low-current switching. (3) The TrenchMOS technology uses vertically-oriented gate structures etched into the silicon, providing higher channel density per unit area than planar MOSFETs. This results in lower RDS(ON) for a given die size and faster switching due to reduced gate charge (2.5nC). The input capacitance of 23-29pF allows rapid gate charging from microcontroller GPIO pins.

Pin Name Function
1 Gate Gate input (logic-level drive)
2 Source Source terminal
3 Drain Drain terminal
  • High-speed line drivers with 8ns turn-on delay for digital signal switching
  • Relay and solenoid drivers with logic-level gate drive from 3.3V MCU
  • Low-power switching circuits in battery-operated devices
  • Level shifting and interface circuits between different voltage domains
Model Manufacturer Key Difference
BSS138K-7 Diodes Inc 50V/220mA, lower VGS(th), active
2N7002K-7 Diodes Inc 60V/300mA, lower RDS(ON)
BSS123-7 Diodes Inc Pin-compatible, active product
DMN2075U-7 Diodes Inc 20V/750mA, much lower RDS(ON)
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