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BSC440N10NS3G

40V N-ch MOSFET, 3.7mOhm, 88A, SuperSO8, OptiMOS

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Manufacturer Part：

BSC440N10NS3G

Package：

SuperSO8 / S3088-1 (5 x 6 x 0.9 mm)

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Description

Product Overview

The BSC440N10NS3G is an Infineon OptiMOS 3 N-channel power MOSFET with 100V VDS, 44mOhm RDS(on), 18A drain current, 8.1nC gate charge, and 29W power dissipation. Packaged in SuperSO8 (PG-TDSON-8) 5x6mm, -55C to +150C.

Key Specifications

VDS 100 V
RDS(on) max 44 mOhm @ 10V
ID (Tc) 18 A
Qg (typ) 8.1 nC @ 10V
Vgs(th) 2.0V to 3.5V
Ciss 610 pF
Pd (Tc) 29 W
Package SuperSO8 (PG-TDSON-8)

Features

  • 100V OptiMOS 3 technology
  • 44mOhm max RDS(on) at 10V Vgs
  • 8.1nC low gate charge
  • Excellent FOM (RDS(on) x Qg)
  • Halogen-free, RoHS compliant
  • MSL1 rated
  • Low thermal resistance (4.3 K/W)

Applications

  • Synchronous rectification in AC-DC SMPS
  • 48V motor control systems
  • Isolated DC-DC converters (telecom/datacom)
  • Or-ing switches and circuit breakers

The BSC440N10NS3G is an Infineon OptiMOS N-channel power MOSFET in a SuperSO8 (S3088-1) package. The device features an extremely low 3.7 mOhm typical on-resistance (RDS(on)) at VGS=10V, enabling high-efficiency switching in DC-DC converters and motor drive applications. The 40V drain-source voltage rating and 88A continuous drain current (at TC=25C) make it suitable for 12V and 24V system power management. The SuperSO8 package provides excellent thermal performance with a low junction-to-ambient thermal resistance and top-side cooling capability. The 175C maximum junction temperature enables operation in high-temperature environments. The device is AEC-Q101 qualified for automotive applications and features low gate charge (62 nC typical) for reduced switching losses at high frequencies.

The BSC440N10NS3G operates as a voltage-controlled switch. When a positive gate-source voltage (VGS) exceeding the threshold (typically 2.1V) is applied, an inversion layer forms in the P-body region beneath the gate oxide, creating a conduction channel between drain and source. The OptiMOS trench technology uses deep trench gates with fine pitch to maximize channel density, resulting in the extremely low 3.7 mOhm on-resistance. The gate charge (QG=62 nC at VGS=10V) determines the energy required to switch the MOSFET on and off; lower gate charge enables faster switching and reduced switching losses. The body diode provides a conduction path from source to drain when VDS becomes negative, supporting synchronous rectification in buck converter applications.

Pin Mnemonic Description
1 Source Source terminal
2 Gate Gate terminal
3 Source Source terminal
4 Drain (tab) Drain terminal (exposed pad)
5-8 Drain Drain terminal
  • Synchronous rectifier in 12V server VRM at 300kHz with 3.7mOhm RDS(on) minimizing conduction loss
  • Motor drive H-bridge low-side switch at 24V with 88A pulse current capability
  • Battery protection switch in automotive 12V system with AEC-Q101 qualification
  • Point-of-load DC-DC converter high-side switch with 62nC gate charge for 500kHz operation
Model Manufacturer Key Difference
BSC040N10NS5G Infineon 4.0 mOhm, 100V, SuperSO8
IRF8727PBF-1 Infineon 3.3 mOhm, 30V, SuperSO8
IRLHM630PBF Infineon 5.6 mOhm, 30V, SuperSO8
CSD18536Q5A TI 3.2 mOhm, 60V, SON 5×6
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