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AT45DB081E-SHN-B

8Mbit DataFlash, dual 256B SRAM buffers, SPI 85MHz, SOIC-8, continuous write

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Manufacturer Part：

AT45DB081E-SHN-B

Package：

SOIC-8 (5.3 x 8.0 x 1.8 mm)

Description

Product Overview

The AT45DB081E-SHN-B from Renesas (formerly Dialog/Atmel) is an 8-Mbit (1 MB) DataFlash serial Flash memory with two 256-byte SRAM buffers in an 8-lead SOIC package. It features a SPI-compatible serial interface, rapid page erase, and dual-buffer write architecture that enables continuous data streaming without wait states, making it ideal for data logging and firmware storage.

Key Specifications

Density	8 Mbit (1,032,192 bytes)
Organization	4096 pages x 256 bytes + 2 buffers
Interface	SPI (Mode 0 and 3)
Max SPI Clock	85 MHz
SRAM Buffers	2 x 256 bytes
Page Program Time	3.5 ms typ
Page Erase Time	35 ms typ
Sector Erase	4 KB / 256 KB / full chip
Endurance	100,000 program/erase cycles
Data Retention	20 years
Supply Voltage	2.5V to 3.6V
Operating Temperature	-40°C to +85°C
Package	SOIC-8 (5.3 x 8 mm)

Features

Dual 256-byte SRAM buffers for seamless data streaming
SPI compatible: Mode 0 and Mode 3
85 MHz maximum SPI clock frequency
Rapid page erase and program operations
Flexible sector erase: 4 KB, 256 KB, or full chip
Built-in erase/program status polling
Hardware and software write protection

Applications

Data logging and acquisition systems
Voice and audio storage
Firmware and parameter storage
Digital cameras and printers
Industrial control program storage

Product Introduction:AT45DB081E-SHN-B Product Introduction

The Renesas AT45DB081E-SHN-B is an 8-Mbit DataFlash serial Flash memory optimized for applications requiring continuous data streaming and rapid write operations. Unlike standard SPI Flash memories, it integrates two 256-byte SRAM buffers that allow data to be written into one buffer while the other is being programmed into the Flash array, enabling gapless data capture. The 85 MHz SPI interface supports high-speed data transfer, while the flexible erase architecture (4 KB, 256 KB, and full chip erase) provides efficient storage management. The DataFlash architecture with page-level operation eliminates the block-level erase constraints of standard SPI NOR Flash, making it particularly suitable for data logging where small, frequent writes are required.

Working Principle:AT45DB081E-SHN-B Working Principle

The AT45DB081E-SHN-B uses a unique dual-buffer DataFlash architecture that differs from standard SPI NOR Flash. The memory array is organized as 4096 pages of 256 bytes each, plus two independent 256-byte SRAM buffers. To write data, the host first fills Buffer 1 (or Buffer 2) via SPI with up to 256 bytes. Once the buffer is loaded, a Buffer-to-Page command programs the buffer contents into a specified Flash page in 3.5 ms. During this programming time, the host can continue filling the alternate buffer with the next page of data. This ping-pong buffer scheme enables continuous data streaming at the full SPI data rate without wait states. The device also supports Page-to-Buffer transfers for reading, and Buffer-to-Page with built-in erase operations. The SPI interface supports Mode 0 (CPOL=0, CPHA=0) and Mode 3 (CPOL=1, CPHA=1) at clock rates up to 85 MHz. Sector protection registers and lockdown features prevent accidental erasure of critical firmware or calibration data.

Pin Description:AT45DB081E-SHN-B Pin Definition and Functions

Pin	Name	Description
1	SI	SPI Serial Data Input (MOSI)
2	SCK	SPI Serial Clock
3	RESET#	Hardware Reset (active low)
4	CS#	Chip Select (active low)
5	WP	Hardware Write Protect
6	VCC	Supply Voltage (2.5-3.6V)
7	GND	Ground
8	SO	SPI Serial Data Output (MISO)

Application Scenarios:In which products and applications isAT45DB081E-SHN-B used

Data Logging: Dual-buffer architecture enables continuous sensor data capture at high rates without stopping to wait for Flash program cycles
Audio/Voice Storage: 8 Mbit capacity storing minutes of compressed audio with ping-pong buffer ensuring gapless record and playback
Firmware Update: Page-level write granularity for OTA firmware updates with sector protection preventing corruption of running code
Digital Camera: Image buffer storage with rapid page program supporting burst capture mode in embedded camera modules
Industrial Parameter Storage: 100K cycle endurance with 4 KB sector erase for frequent calibration and configuration data updates

Alternative Models:What chips are recommended as replacements for AT45DB081E-SHN-B

Model	Brand	Density	Buffers	Package
AT45DB041E-SHN-B	Renesas	4 Mbit	2x256B	SOIC-8
AT45DB161E-SHD-B	Renesas	16 Mbit	2x512B	SOIC-8
W25Q80DVSNIG	Winbond	8 Mbit	No	SOIC-8
M25P80-VMN6P	ST	8 Mbit	No	SOIC-8
SST25VF080B-50-4I-S2	Microchip	8 Mbit	No	SOIC-8