الصفحة الرئيسية > الدوائر المتكاملة الدوائر المتكاملة > TPCA8053-H

TPCA8053-H

60V, 5A N-ch MOSFET, 48mOhm Rds, SOP-8, DC-DC and motor drive

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جزء الشركة المصنعة ： جزء الشركة المصنعة

TPCA8053-H

الحزمة ： الحزمة

SOP-8 (5.00 x 6.20 x 1.75 mm)

الوصف

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The TPCA8053-H from Toshiba is a 60 V, 5 A N-channel power MOSFET in an SOP-8 package. With low RDS(on) and optimized switching characteristics, it is designed for DC-DC converter and motor drive applications in consumer and industrial electronics.

المواصفات الرئيسية

VDS	60 V
بطاقة الهوية	5 A
RDS(on) max @ VGS=10V	48 mΩ
VGS(th)	1.0 V to 2.5 V
Qg typ	12 nC
الحزمة	SOP-8

الميزات

60 V drain-source voltage rating for 24 V/48 V systems
Low RDS(on) for reduced conduction losses
Low gate charge for efficient switching
Standard SOP-8 footprint compatible with automated assembly
Pb-Free and RoHS compliant

التطبيقات

DC-DC buck and boost converters
Motor drive half-bridge and full-bridge stages
Load switch and power routing
Battery management systems
General-purpose power switching

مقدمة المنتج:TPCA8053-H مقدمة المنتج

The TPCA8053-H from Toshiba is a 60 V N-channel power MOSFET in an SOP-8 surface-mount package, designed for medium-power switching and amplification applications. With a maximum RDS(on) of 48 mΩ at VGS = 10 V and a continuous drain current rating of 5 A, the device is suitable for DC-DC converter, motor drive, and load switch applications in 24 V and 48 V systems. The 60 V breakdown voltage provides adequate margin for 12 V and 24 V nominal bus applications with transient requirements. The low gate charge of 12 nC typical enables efficient switching at frequencies up to several hundred kHz with modest gate driver capability. The SOP-8 package is widely supported in PCB assembly and offers a compact footprint for space-constrained designs. Pb-Free and RoHS compliant.

مبدأ العمل:TPCA8053-H مبدأ العمل

The TPCA8053-H is an N-channel enhancement mode vertical DMOS power MOSFET. When a positive gate-source voltage exceeding the threshold (1.0-2.5 V) is applied, an inversion layer forms in the P-body beneath the gate oxide, creating a conduction channel between source and drain. The MOSFET operates as a voltage-controlled switch where the gate voltage controls the drain-source current. The 60 V blocking capability is achieved through careful design of the epitaxial drift region. During switching, the gate driver must supply charge to charge and discharge the gate-source and gate-drain capacitances, and the low 12 nC total gate charge enables fast transitions. The SOP-8 package provides adequate thermal dissipation for the 5 A current rating with proper PCB copper area.

وصف الدبوس:TPCA8053-H تعريف الدبوس ووظائفه

دبوس	الاسم	الوظيفة
1	S	Source terminal
2	S	Source terminal
3	G	Gate drive terminal
4	S	Source terminal
5-8	D	Drain terminals

Application Scenarios:In which products and applications isTPCA8053-H مستعمل

DC-DC Converter: High-side or low-side switch in synchronous buck converters for 12 V/24 V input systems
Motor Drive: Half-bridge or full-bridge inverter switches for brushed DC and BLDC motor drives
Load Switch: High-side N-FET load disconnect with charge pump gate drive in power distribution
Battery Management: Discharge path control and reverse polarity protection in 24 V battery systems
General Switching: Power routing and hot-swap control in industrial and telecom equipment

Alternative Models:What chips are recommended as replacements for TPCA8053-H

الطراز	الشركة المصنعة	VDS	بطاقة الهوية	RDS(تشغيل)	الحزمة	الملاحظات
TPCA8056-H	توشيبا	60 V	8 A	30 mΩ	SOP-8	Higher current, lower RDS
IRF7484MTRPBF	إنفينيون	100 V	12 A	22 mΩ	SO-8	Higher voltage and current
FDD86102	أونسمي	100 V	11 A	18 mΩ	SO-8	Higher voltage, better RDS
SI4892DY-T1-E3	فيشاي	100 V	12 A	18 mΩ	SO-8	Similar from Vishay
AO4468	Alpha & Omega	60 V	6 A	30 mΩ	SO-8	Lower RDS, higher ID