نظرة عامة على المنتج
The STW48N60M2 from STMicroelectronics is an N-channel MDmesh M2 power MOSFET rated at 600V/48A with 52 mΩ max on-resistance. Using ST’s innovative MDmesh multiple-resurf technology, it delivers extremely low on-resistance and gate charge for high-efficiency switching in hard-switching and resonant power converter topologies. Packaged in TO-247 for high-power industrial and server power applications.
المواصفات الرئيسية
| النوع | N-Channel Enhancement MOSFET (MDmesh M2) |
| VDS | 600V |
| ID (Continuous) | 48A @ 25°C |
| RDS(ON) | 52 mΩ max @ VGS=10V, 25°C |
| VGS(th) | 3.0V to 4.5V typical |
| Gate Charge (Qg) | 88 nC total @ VDS=480V |
| Rise Time | 22 ns typical |
| Fall Time | 9 ns typical |
| dv/dt Immunity | >50 V/ns |
| تبديد الطاقة | 416W @ TC=25°C |
| درجة حرارة التشغيل | -55°C to +150°C (junction) |
| الحزمة | TO-247 |
الميزات
- MDmesh M2 technology: extremely low RDS(ON) × Qg figure of merit
- 600V drain-source voltage for offline and PFC applications
- 52 mΩ max RDS(ON) at 10V gate drive
- Low gate charge (88 nC) for fast switching
- High dv/dt immunity (>50 V/ns) for reliability
- Zener-protected gate for ESD robustness
- 100% avalanche tested for ruggedness
- TO-247 package for high-power dissipation
التطبيقات
- Server and telecom AC-DC power supply PFC stage
- Half-bridge and full-bridge DC-DC converters
- Solar inverter switching stage
- Welding equipment power stage
- Motor drive inverter