SST39VF040-70-4C-NHE

The SST39VF040-70-4C-NHE is a 4 Mbit (512K x8) CMOS Multi-Purpose Flash memory device manufactured with Microchip’s proprietary SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector provide superior reliability compared to alternative flash approaches. Operating from a single 2.7V to 3.6V supply, the device supports fast byte-programming at 14 us typical and sector-erase operations in 18 ms typical. The SuperFlash technology ensures fixed erase and program times independent of accumulated erase/program cycles, eliminating the need for software or hardware de-rating over the device lifetime.

The SST39VF040 uses SuperFlash technology with a split-gate cell architecture. For programming, a high voltage generated internally by the charge pump causes Fowler-Nordheim tunneling through the thick oxide to inject charge onto the floating gate, raising the cell threshold. For erasure, the reverse process removes charge from the floating gate. The device performs automatic write timing with an internal VPP generator, eliminating the need for external high-voltage supplies. End-of-write detection is provided through Toggle Bit or Data# Polling methods. Hardware and software data protection schemes prevent inadvertent writes during power transitions.

• Firmware and bootloader storage in embedded systems
• In-system programmable configuration memory
• Industrial control program storage with field update capability
• Consumer electronics parameter and calibration data storage
• Networking equipment code storage and updates