نظرة عامة على المنتج
The SI1416EDH-T1-GE3 is a Vishay TrenchFET N-channel MOSFET rated at 30V, 3.9A, with 58mOhm max RDS(on) in an SC-70-6 (SOT-363) package. Features 1500V HBM ESD protection, low gate charge, and fast switching. -55C to +150C.
المواصفات الرئيسية
| نوع القناة | N-Channel |
| VDS | 30 V |
| بطاقة الهوية | 3.9 A (Tc) |
| RDS(on) Max | 58 mOhm @ VGS=10V |
| VGS(th) | 0.6 V to 1.4 V |
| Gate Charge (typ) | 7.5 nC @ 10V |
| الحزمة | SC-70-6 / SOT-363 |
الميزات
- TrenchFET power MOSFET technology
- 30V, 3.9A in tiny SC-70-6 package
- 58mOhm max RDS(on) at VGS=10V
- Low gate charge: 7.5nC typical
- 1500V HBM ESD protection
- 100% Rg tested
التطبيقات
- Load switches in portable devices
- DC-DC converter switches
- Battery management circuits
- Power management in handheld electronics