نظرة عامة على المنتج
The S29GL01GS11DHSS20 is a Infineon product designed for electronic applications. It features compact design with reliable performance characteristics suitable for various industrial and consumer applications.
المواصفات الرئيسية
| Memory Type | NOR Flash (MirrorBit Eclipse) |
| الكثافة | 1Gbit (128MB) |
| Organization | 64M x 16 |
| الواجهة | Parallel (Asynchronous) |
| Random Access Time | 110 ns (Max) |
| Page Access Time | 15 ns (Min) |
| Programming Buffer | 512 bytes |
| Buffer Programming Rate | 1.5 MBps (Typ) |
| Sector Erase Time | 128KB sector, 477 KBps (Typ) |
| Sector Size | 128KB Uniform |
| Supply Voltage (VCC) | 2.7 فولت إلى 3.6 فولت |
| I/O Voltage (VIO) | 1.65V to VCC |
| Active Current (Read) | 60 mA (Max) |
| التيار الاحتياطي | 200 uA |
| دورات البرمجة/المسح البرمجي | 100,000 |
| الاحتفاظ بالبيانات | 20 Years |
| ECC | Internal Hardware (Single-bit correction) |
| OTP Area | 1024 bytes |
| درجة حرارة التشغيل | -40 C to +85 C |
| الحزمة | 56-TSOP |
| Technology | 65nm MirrorBit |
الميزات
1Gbit parallel NOR Flash with 65nm MirrorBit Eclipse technology; CMOS 3.0V core with Versatile I/O (1.65V to VCC); 16-bit data bus; Asynchronous 32-byte page read (15ns page access); 512-byte programming buffer; Internal hardware ECC with single-bit error correction; Uniform 128KB sectors; Suspend/Resume for program and erase operations; Advanced Sector Protection (ASP); 1024-byte OTP array with lockable regions; Common Flash Interface (CFI); 100,000 program/erase cycles; 20-year data retention
التطبيقات
Automotive infotainment and ADAS; Industrial control systems; Networking and telecommunications; Embedded code storage; Military and aerospace (extended temperature grades available); Set-top boxes and digital TVs