الصفحة الرئيسية > الدوائر المتكاملة الدوائر المتكاملة > الدوائر المتكاملة الخطية التناظرية > RFPA3800

RFPA3800

1.8-2.7GHz GaN PA, 28V supply, cellular infrastructure base station

5817

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جزء الشركة المصنعة ： جزء الشركة المصنعة

RFPA3800

الحزمة ： الحزمة

QFN (details per specific variant)

الوصف

نظرة عامة على المنتج

The RFPA3800 from Qorvo is a high-power GaN MMIC power amplifier designed for cellular infrastructure applications. Operating in the 1.8-2.7 GHz frequency range, it delivers high output power with excellent efficiency for 4G/5G base station transmit chains.

المواصفات الرئيسية

Frequency Range	1.8 to 2.7 GHz
Technology	GaN on SiC
التطبيق	Cellular infrastructure PA
جهد الإمداد	28 V (typical)
الحزمة	QFN / Flange

الميزات

GaN-on-SiC technology for high power density and thermal performance
Optimized for Doherty and push-pull base station architectures
Wide bandwidth supporting multiple cellular bands
High linear output power for 4G LTE and 5G NR signals

التطبيقات

4G/5G macro base station power amplifiers
Doherty PA architectures
Small cell and remote radio head transmitters
Cellular repeaters and boosters

مقدمة المنتج:RFPA3800 مقدمة المنتج

The RFPA3800 from Qorvo is a gallium nitride (GaN) on silicon carbide (SiC) monolithic microwave integrated circuit (MMIC) power amplifier designed for cellular infrastructure applications in the 1.8 to 2.7 GHz frequency range. Leveraging the high power density, high breakdown voltage, and excellent thermal conductivity of the GaN/SiC material system, the RFPA3800 delivers high output power with the efficiency and linearity required for 4G LTE and 5G NR base station transmit chains. The device is optimized for use in Doherty and push-pull amplifier architectures common in macro base station designs, supporting wide signal bandwidths and high peak-to-average power ratio (PAPR) waveforms. The 28 V supply voltage is standard for cellular infrastructure, enabling direct operation from base station PA supply rails.

مبدأ العمل:RFPA3800 مبدأ العمل

The RFPA3800 is based on a GaN HEMT (high electron mobility transistor) fabricated on a semi-insulating SiC substrate. The GaN material system creates a two-dimensional electron gas (2DEG) channel at the AlGaN/GaN heterojunction, providing high electron mobility and carrier density. Under bias, the HEMT amplifies RF signals by modulating the channel conductance through the gate voltage. The GaN-on-SiC platform offers approximately 3-5 times the power density of GaAs MMICs, enabling compact die sizes for a given output power. The SiC substrate provides excellent thermal conductivity (~3.7 W/cmK) that efficiently conducts waste heat from the active devices to the package and heatsink. The amplifier is designed for deep class AB or class B operation with digital predistortion (DPD) to achieve the high linearity required for OFDM-based 4G/5G signals.

وصف الدبوس:RFPA3800 تعريف الدبوس ووظائفه

مجموعة الدبوس	الوظيفة
RF Input	RF signal input port; 50 Ω matched, requires external DC block
RF Output / Drain	RF output port; drain bias injected via external bias network
Gate Bias	Gate voltage control for quiescent current setting
Drain Bias	28 V drain supply input (typically via bias-tee on RF output)
أرضي	RF ground and thermal path; package base must be soldered to PCB

Application Scenarios:In which products and applications isRFPA3800 مستعمل

4G/5G Macro Base Station: Final stage power amplifier in macro cell transmit chains supporting multi-carrier LTE and NR signals
Doherty PA Architecture: Main or peaking amplifier in asymmetric Doherty configurations for high-efficiency base stations
Remote Radio Head: Tower-mounted PA module with high power density and thermal efficiency
Cellular Repeater: High-linearity amplifier for signal rebroadcast in coverage extension applications
Small Cell Backhaul: Point-to-point microwave link transmitter for small cell backhaul

Alternative Models:What chips are recommended as replacements for RFPA3800

الطراز	الشركة المصنعة	Freq Range	Technology	الملاحظات
RFPA3810	كورفو	1.8-2.7 GHz	GaN	Higher power variant
QPA2580	كورفو	2.4-4.2 GHz	GaN	Higher band, different range
CGH40240PP	Wolfspeed	DC-6 GHz	GaN	Discrete GaN, higher power
MAOM-006539	Macom	1.8-2.7 GHz	GaN	Alternative GaN PA
NXP MRF24G300H	NXP	2.3-2.7 GHz	LDMOS	LDMOS alternative, lower cost