The QSD2030F is an NPN silicon phototransistor from onsemi in a side-view (right-angle) package, sensitive to 850nm near-infrared radiation. When infrared light enters the transparent side window and strikes the phototransistor die, photons with energy greater than the silicon bandgap (1.12eV) create electron-hole pairs in the base-collector depletion region. The generated photocurrent acts as base current, amplified by the transistor hFE (typically 100-500) to produce a collector current of 0.5mA to 5mA at 1mW/cm2 irradiance. The side-view package directs the optical axis at 90 degrees to the PCB plane, ideal for slot-type object detection where the sensor mounts perpendicular to a slotted disc or interrupter. The device operates in common-emitter configuration: collector is pulled up through a load resistor to VCC, and the output voltage at the collector drops as light increases. Rise/fall times are typically 15us, limiting bandwidth to approximately 20kHz. The dark current (collector current with no light) is typically 10nA at 25C.