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NTS4173PT1G

P-Channel MOSFET, 30V, 1.2A, 150mOhm, SC-70-3

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جزء الشركة المصنعة ： جزء الشركة المصنعة

NTS4173PT1G

الحزمة ： الحزمة

SC-70-3 (SOT-323) (2.0 x 1.25 x 0.95 mm)

الوصف

NTS4173PT1G Overview

The NTS4173PT1G is a -60V P-channel enhancement mode MOSFET from onsemi, maximum drain current -3.5A, RDS(on) 95mOhm at VGS=-10V, in a SOT-23-3 package, suitable for power switching and load switching applications.

Key Features

VDS: -60V
ID: -3.5A
RDS(on): 95mOhm at VGS=-10V
VGS: +/-20V
Gate charge: 15nC
Power dissipation: 1.4W

مقدمة المنتج:NTS4173PT1G مقدمة المنتج

The NTS4173PT1G is a P-Channel enhancement-mode MOSFET from onsemi, rated at 30 V drain-source voltage and 1.2 A continuous drain current in a compact SC-70-3 (SOT-323) package. With an on-resistance of 150 mOhm at 10 V gate drive and a low threshold voltage of 1.5 V, it is optimized for low-voltage switching and load management in battery-operated and portable equipment. The logic-level gate drive makes it compatible with 2.5 V and 3.3 V microcontroller outputs.

مبدأ العمل:NTS4173PT1G مبدأ العمل

As a P-Channel MOSFET, the NTS4173PT1G conducts current from source to drain when the gate voltage is pulled below the source potential. Applying a gate-source voltage more negative than the threshold voltage (-1.5 V) creates an inversion layer (P-channel) in the N-type body, allowing hole conduction. The low on-resistance of 150 mOhm minimizes conduction losses during switching. The gate charge of 10.1 nC enables fast switching transitions, while the input capacitance of 430 pF limits the drive current requirement from microcontroller GPIO pins.

وصف الدبوس:NTS4173PT1G تعريف الدبوس ووظائفه

دبوس	الاسم	الوصف
1	البوابة	Control terminal; voltage applied here modulates channel conduction
2	المصدر	Current source terminal; typically connected to supply rail
3	الصرف	Current sink terminal; typically connected to load

Package: SC-70-3 (SOT-323). Pin 1 (Gate) is identified by the dot marking on the package.

NTS4173PT1G uses the SC-70-3 (SOT-323) surface-mount package with Pin 1 (Gate) identified by a dot or bevel on the package corner. This is a P-channel enhancement-mode MOSFET with logic-level gate threshold (VGS(th) = 1.0-1.5V). In typical load-switch applications, Source connects to VCC, Drain to the load, and Gate is pulled to VCC (off) or GND (on). The SC-70-3 footprint is footprint-compatible with other SOT-323 MOSFETs but NOT with SOT-23-3. The low gate charge (10.1nC) enables fast switching from microcontroller GPIO pins without additional gate drive circuitry.

Application Scenarios:In which products and applications isNTS4173PT1G مستعمل

Load Switching: Battery-powered device power management with microcontroller GPIO control
Power MUXing: Selection between multiple power sources in portable systems
Battery Protection: Disconnect switch in Li-ion battery management circuits
Level Shifting: Low-voltage logic to higher-voltage signal translation
LED Backlight Control: PWM dimming driver for display backlight in mobile devices

NTS4173PT1G is particularly suited for load-switching applications in battery-powered portable devices where space is at a premium. Its SC-70-3 footprint enables compact power routing in smartphones, tablets, and wearables. The logic-level gate threshold allows direct microcontroller drive without level-shifting circuitry. Common use cases include power gating of RF modules, sensor subsystems, and display backlights in portable electronics. The low gate charge (10.1nC) also makes it suitable for DC-DC converter synchronous rectification at moderate frequencies.

Alternative Models:What chips are recommended as replacements for NTS4173PT1G

الطراز	الشركة المصنعة	Vdss	Id	Rds(on)	الحزمة
NTS4173NT1G	أونسمي	30 V	1.2 A	150 mOhm	SC-70-3
SI2333DS	فيشاي	30 V	1.4 A	120 mOhm	SOT-23
BSS84	نيكسبيريا	50 V	130 mA	10 Ohm	SOT-23
DMG2305UX	شركة ديودز	20 V	1.8 A	120 mOhm	SOT-23
NTR4173NT1G	أونسمي	30 V	1.2 A	150 mOhm	SOT-23

NTS4173PT1G is a P-channel 30V/1.2A MOSFET in SC-70-3 (SOT-323) from onsemi with 150mΩ RDS(on) at VGS=10V. The NTS4173NT1G variant offers the same specs in a slightly different pinout configuration. BSS84 provides a classic P-channel alternative with higher 250mΩ RDS(on) at lower cost. For lower on-resistance, SI2305DS offers 78mΩ in SOT-23-3 with 2.5A current rating. The NX3008PBK is a dual P-channel option for complementary pair applications.