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NTR4503NT1G
SOT-23-3
The NTR4503NT1G from onsemi is a P-channel enhancement-mode MOSFET rated at -30V/-3.6A with 60mOhm on-resistance in SOT-23-3 for load switching and power management.
| الحزمة | SOT-23-3 |
The NTR4503NT1G from onsemi is a P-channel enhancement-mode MOSFET rated at -30V/-3.6A with 60mOhm on-resistance in SOT-23-3 for load switching and power management.
The NTR4503NT1G is a P-channel enhancement-mode MOSFET from onsemi in SOT-23-3, rated at -30V VDSS, -3.6A ID, and 60mOhm RDS(on) at VGS=-4.5V. P-channel MOSFETs are used for high-side switching: the source connects to the positive supply, and the drain connects to the load. When VGS is more negative than the threshold (-0.6 to -1.2V), the channel conducts. To fully enhance the MOSFET (minimum RDS(on)), VGS must be -4.5V or lower. For a 5V system, the gate is pulled to GND (VGS = -5V) to turn on, and to 5V (VGS = 0V) to turn off. The 60mOhm RDS(on) produces 0.78W at 3.6A, exceeding the SOT-23-3 package dissipation limit (0.5W at 25C). In practice, continuous current is limited to 2-3A with adequate PCB copper for heatsinking. The gate charge is only 7nC at VGS=-4.5V, allowing fast switching with minimal drive power. The device includes an internal gate-source ESD protection zener (8V clamp). The SOT-23-3 pinout follows the standard MOSFET convention: pin 1=G, pin 2=S, pin 3=D. The -NT1G suffix specifies SOT-23-3, lead-free, tape-and-reel (3000 pcs). Applications include: load switches (power gating), battery protection circuits, and reverse polarity protection in 3.3-5V systems.
| دبوس | الاسم | النوع | الوظيفة |
|---|---|---|---|
| 1 | G | المدخلات | Gate (VGS threshold -0.6 to -1.2V, max +/-8V) |
| 2 | S | الطاقة | Source (connects to positive rail for high-side P-ch switching) |
| 3 | D | الطاقة | Drain (-30V VDSS, connects to load, 60mOhm RDS(on) at VGS=-4.5V) |
| الشركة المصنعة | رقم الجزء | الحزمة | الملاحظات |
|---|---|---|---|
| أونسمي | NTR4503NT1G | SOT-23-3 | Same device, onsemi brand |
| شركة ديودز | DMP3098L-7 | SOT-23-3 | P-ch -30V -2.4A, 65mOhm, Diodes Inc |
| فيشاي | SI2323DS-T1-E3 | SOT-23-3 | P-ch -20V -3A, 40mOhm, Vishay |
| إنفينيون | BSS84P7H6327XTSA1 | SOT-23-3 | P-ch -60V -0.13A, Infineon |
| توشيبا | SSM3J334R | SOT-23-3 | P-ch -30V -3A, 28mOhm, Toshiba |
العلامة التجارية:
الحزمة:
دورة الشحن 3 ~ 7 أيام
الحد الأدنى للطلب هو 1
العلامة التجارية:
الحزمة:
دورة الشحن 3 ~ 7 أيام
الحد الأدنى للطلب هو 1
العلامة التجارية:
الحزمة:
دورة الشحن 3 ~ 7 أيام
الحد الأدنى للطلب هو 1
العلامة التجارية:
الحزمة:
دورة الشحن 3 ~ 7 أيام
الحد الأدنى للطلب هو 1
العلامة التجارية:
الحزمة:
دورة الشحن 3 ~ 7 أيام
الحد الأدنى للطلب هو 1
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