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MT48LC4M16A2P-6A:J

64Mb SDRAM, 4Mx16, 166MHz, CL2/3, 3.3V, 54-pin TSOP-II

4231

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جزء الشركة المصنعة ： جزء الشركة المصنعة

MT48LC4M16A2P-6A:J

الحزمة ： الحزمة

54-pin TSOP-II (22 x 10.16 mm)

الوصف

نظرة عامة على المنتج

The MT48LC4M16A2P-6A:J from Micron Technology is a 64Mb (4Meg x 16) SDRAM operating at 166MHz with a 6ns clock access time. Featuring a single 3.3V supply and programmable CAS latency of 2 or 3, it provides high-bandwidth memory for networking, computing, and consumer applications in a 54-pin TSOP-II package.

المواصفات الرئيسية

الكثافة	64 Mb (4M x 16)
Organization	4 Meg x 16
الحد الأقصى لتردد الساعة	166 MHz
Clock Access Time	6 ns (CL=2)
جهد الإمداد	3.3V (3.0V to 3.6V)
الواجهة	LVCMOS
CAS Latency	2, 3 (programmable)
Banks	4
الحزمة	54-pin TSOP-II
درجة حرارة التشغيل	0°C to +70°C (commercial)

الميزات

Single 3.3V power supply with LVCMOS interface
Programmable CAS latency of 2 or 3 for system flexibility
Programmable burst length of 1, 2, 4, 8, or full page
Four internal banks for concurrent operation
Auto refresh and self refresh modes
Byte-level read/write masking via DQM pins

التطبيقات

Networking and telecommunications equipment buffering
Embedded computing and industrial control frame buffers
Consumer electronics video and audio buffering
Printer and imaging system data storage
Digital set-top box and display controller memory

مقدمة المنتج:MT48LC4M16A2P-6A:J مقدمة المنتج

The MT48LC4M16A2P-6A:J is a 64-megabit synchronous DRAM from Micron Technology organized as 4,194,304 words by 16 bits. It operates at clock frequencies up to 166MHz with a -6 speed grade, providing high-bandwidth data throughput for memory-intensive applications. The device features four internal banks that can operate concurrently, programmable CAS latency of 2 or 3, and programmable burst lengths of 1, 2, 4, 8, or full page. Auto-refresh and self-refresh modes ensure data integrity, while DQM pins provide byte-level masking for read and write operations. The 3.3V LVCMOS-compatible interface and 54-pin TSOP-II package make it suitable for a wide range of networking, computing, and consumer electronic applications.

مبدأ العمل:MT48LC4M16A2P-6A:J مبدأ العمل

The MT48LC4M16A2P-6A:J operates using a synchronous DRAM architecture with three key subsystems. (1) The command decode and control logic processes inputs from CS, RAS, CAS, WE, and address lines on the rising clock edge to determine the operation mode (activate, read, write, precharge, refresh, mode register set). The mode register stores configuration settings including CAS latency, burst length, and burst type. (2) The memory array consists of four independent banks, each containing a 1Mx16 DRAM cell array with row and column decoders. The activate command opens a row in a selected bank, and subsequent read/write commands access columns within that row. (3) The data path includes a 16-bit bidirectional data bus with DQM masking, and the I/O buffers support burst-mode data transfer at the full clock rate, achieving peak bandwidth of 332MB/s at 166MHz.

وصف الدبوس:MT48LC4M16A2P-6A:J تعريف الدبوس ووظائفه

دبوس	الاسم	الوظيفة
A0-A11	Address	Row/column address inputs, BA0/BA1 bank select
DQ0-DQ15	Data	Bidirectional data bus
CLK	الساعة	System clock input
CKE	Clock Enable	Clock enable / self-refresh control
CS	Chip Select	Chip select (active low)
RAS	Row Address Strobe	Command input (active low)
CAS	Column Address Strobe	Command input (active low)
WE	Write Enable	Command input (active low)
DQML/DQMH	Data Mask	Lower/upper byte data mask
VDD/VDDQ	الطاقة	3.3V core and I/O supply
VSS/VSSQ	أرضي	Core and I/O ground

Application Scenarios:In which products and applications isMT48LC4M16A2P-6A:J مستعمل

Networking equipment packet buffering and queue management memory
Embedded processor system main memory for industrial controllers
Video frame buffering in consumer electronics and display controllers
Imaging and printing system data storage pipelines
Digital set-top box and DVR memory subsystems

Alternative Models:What chips are recommended as replacements for MT48LC4M16A2P-6A:J

الطراز	الشركة المصنعة	الفرق الرئيسي
MT48LC4M16A2P-75	ميكرون	133MHz, 7.5ns speed grade
MT48LC8M16A2P-6	ميكرون	128Mb, 8Mx16 density
IS42S16400J-6TL	ISSI	64Mb SDRAM equivalent, TSOP-II
W9812G6KH-6	وينبوند	64Mb SDRAM equivalent, TSOP-II
EM638165TS-6G	Etron	64Mb SDRAM equivalent, TSOP-II