الصفحة الرئيسية > الدوائر المتكاملة الدوائر المتكاملة > MT46H32M16LFBF-5 IT:C

MT46H32M16LFBF-5 IT:C

512Mb Mobile DDR (LPDDR), 200MHz, BGA-90

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جزء الشركة المصنعة ： جزء الشركة المصنعة

MT46H32M16LFBF-5 IT:C

الحزمة ： الحزمة

BGA-90 (8x13mm)

الوصف

نظرة عامة على المنتج

The MT46H32M16LFBF-5 IT:C from Micron is a 512Mb Mobile DDR (LPDDR) SDRAM with 200MHz clock, 1.8V supply, and partial-array refresh in BGA-90 for mobile devices.

المواصفات الرئيسية

الحزمة

BGA-90 (8x13mm)

الميزات

See datasheet for complete specifications
Industry-standard package

التطبيقات

Industrial control
Consumer electronics
Communication equipment
Power management

مقدمة المنتج:MT46H32M16LFBF-5 IT:C مقدمة المنتج

The MT46H32M16LFBF-5 IT:C from Micron is a 512Mb Mobile DDR (LPDDR) SDRAM with 200MHz clock, 1.8V supply, and partial-array refresh in BGA-90 for mobile devices.

مبدأ العمل:MT46H32M16LFBF-5 IT:C مبدأ العمل

The MT46H32M16LFBF-5 IT:C is a 512Mb (64MB) Mobile DDR (LPDDR) SDRAM from Micron in BGA-90, organized as 32M x 16-bit, running at 200MHz (CL3). LPDDR (Low-Power DDR) reduces operating voltage to 1.8V (vs 2.5V for standard DDR) and uses partial-array refresh, temperature-compensated refresh, and deep power-down mode to minimize power consumption. Memory access uses a two-step process: first, the RAS (Row Address Strobe) command latches the row address into one of 8 banks (selected by BA0-BA2), opening a row in the memory array. Then, the CAS (Column Address Strobe) command latches the column address to access a specific 16-bit word. Precharge closes the row before opening another. The burst length is programmable (2, 4, 8, or full-page), with BL4 being the most common. The differential data strobes (DQS) are driven by the DRAM during reads and by the memory controller during writes, providing source-synchronous timing. The -5 speed grade specifies 5ns clock period (200MHz). The IT:C suffix denotes industrial temperature range with known good die traceability. Mobile DDR achieves 60% lower active power and 90% lower standby power compared to standard DDR.

وصف الدبوس:MT46H32M16LFBF-5 IT:C تعريف الدبوس ووظائفه

دبوس	الاسم	النوع	الوظيفة
A0-A12	A0-A12	المدخلات	Row/column address lines (multiplexed)
BA0-BA2	BA0-BA2	المدخلات	Bank address (8 banks)
DQ0-DQ15	DQ0-DQ15	الإدخال/الإخراج	Data bus (16-bit wide)
CLK/CLK	CLK/CLK	المدخلات	Differential clock
CKE	CKE	المدخلات	Clock enable
CS/RAS/CAS/WE	CMD	المدخلات	Command inputs (chip select, row/col strobe, write enable)
LDQS/UDQS	DQS	الإدخال/الإخراج	Data strobes (lower/upper byte)
LDM/UDM	DM	المدخلات	Data masks (lower/upper byte)
VDD/VDDQ/VSS/VSSQ	PWR	الطاقة	Core and I/O power supplies

Application Scenarios:In which products and applications isMT46H32M16LFBF-5 IT:C مستعمل

Industrial control

Consumer electronics

Communication equipment

Power management

Alternative Models:What chips are recommended as replacements for MT46H32M16LFBF-5 IT:C

الشركة المصنعة	رقم الجزء	الحزمة	الملاحظات
ميكرون	MT46H32M16LFBF-6 IT:C	BGA-90	Same device, 166MHz grade
سامسونج	K4X51163PJ-1GCF	BGA-90	512Mb LPDDR, 200MHz
ميكرون	MT46H64M16LFBF-5 IT:C	BGA-90	1Gb LPDDR, double density
وينبوند	W9751G6KB-25	BGA-90	512Mb LPDDR, 200MHz alternative
ISSI	IS45S16160G-7BLA1	BGA-90	256Mb mobile DDR, 143MHz