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MT41K256M16HA-125:E
96-BGA (8x14mm)
The MT41K256M16HA-125:E from Micron is a 4Gb (256Mx16) DDR3L SDRAM operating at 1600Mbps in a 96-ball BGA package for high-performance embedded memory applications.
| الحزمة | 96-BGA (8x14mm) |
The MT41K256M16HA-125:E from Micron is a 4Gb (256Mx16) DDR3L SDRAM operating at 1600Mbps in a 96-ball BGA package for high-performance embedded memory applications.
The MT41K256M16HA-125:E is a 4Gb (256M x 16-bit) DDR3L SDRAM from Micron in 96-ball FBGA, running at 1600Mbps data rate (800MHz clock, 125ns access time). The DDR3L specification operates at 1.35V (vs 1.5V for standard DDR3), reducing power consumption by approximately 15%. The -125:E suffix specifies CL=9 at 800MHz (125ns clock period), extended temperature range (0C to +95C). The memory is organized as 8 banks of 32K rows x 1024 columns x 16 bits. Access begins with ACTIVATE (row address on A0-A15), followed by READ or WRITE (column address on A0-A9). After access, PRECHARGE closes the row. The DDR3 protocol requires: tRCD = 13.5ns (ACTIVATE to READ/WRITE), tRP = 13.5ns (PRECHARGE to ACTIVATE), tRAS = 35ns (ACTIVATE to PRECHARGE). The data bus uses DDR (Double Data Rate) signaling: data is transferred on both rising and falling clock edges, doubling throughput. The DQS (Data Strobe) signal is a bidirectional clock that the DRAM sources during reads and the controller sources during writes, providing precise data capture timing. The ODT (On-Die Termination) feature terminates the DQ/DQS signals internally at 34/40/60/120 ohms (programmable), eliminating external termination resistors and improving signal integrity. The ZQ calibration pin connects to a 240-ohm external resistor, providing a reference for internal VREF and ODT calibration. The auto-refresh requirement is 8192 cycles per 64ms (distributed refresh). The self-refresh mode maintains data with minimal power (IDD6 = 12mA). Applications include: embedded Linux memory, FPGA buffering, and SoC main memory.
| دبوس | الاسم | النوع | الوظيفة |
|---|---|---|---|
| 1-16 | DQ0-DQ15 | الإدخال/الإخراج | Data bus (16-bit wide, bidirectional, DDR signaling) |
| 17-20 | A0-A15 | المدخلات | Address inputs (row/column/bank, multiplexed) |
| 21-24 | BA0-BA2 | المدخلات | Bank address (8 internal banks) |
| 25-28 | CLK/CLK/CKE/CS | Input/Clock | Differential clock / Clock enable / Chip select |
| 29-32 | RAS/CAS/WE/RESET | المدخلات | Command inputs / Active-low reset |
| 33-36 | DQS0-DQS1/DM0-DM1 | الإدخال/الإخراج | Data strobes / Data masks (per byte) |
| 37-96 | VDD/VDDQ/VSS/VSSQ/ODT/ZQ | Power/Cal | 1.35V core / 1.35V I/O / Ground / On-die termination / ZQ calibration |
| الشركة المصنعة | رقم الجزء | الحزمة | الملاحظات |
|---|---|---|---|
| ميكرون | MT41K256M16HA-125:E | BGA-96 | Same device, Micron brand |
| ميكرون | MT41K512M16HA-125:E | BGA-96 | 512Mb version, double density |
| سامسونج | K4B4G1646E-BYMA | BGA-96 | 4Gb DDR3L, Samsung brand |
| SK Hynix | H5TC4G63AFR-PBA | BGA-96 | 4Gb DDR3L, Hynix brand |
| وينبوند | W632GU6MB-12 | BGA-96 | 2Gb DDR3L, Winbond brand |
العلامة التجارية:
الحزمة:
دورة الشحن 3 ~ 7 أيام
الحد الأدنى للطلب هو 1
العلامة التجارية:
الحزمة:
دورة الشحن 3 ~ 7 أيام
الحد الأدنى للطلب هو 1
دورة الشحن 3 ~ 7 أيام
الحد الأدنى للطلب هو 1
العلامة التجارية:
الحزمة:
دورة الشحن 3 ~ 7 أيام
الحد الأدنى للطلب هو 1
العلامة التجارية:
الحزمة:
دورة الشحن 3 ~ 7 أيام
الحد الأدنى للطلب هو 1
العلامة التجارية:
الحزمة:
دورة الشحن 3 ~ 7 أيام
الحد الأدنى للطلب هو 1
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