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MMBT4401-7-F

NPN small-signal transistor, 40V VCEO, 600mA IC, hFE 100-300, 250MHz fT in SOT-23-3 package

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جزء الشركة المصنعة ： جزء الشركة المصنعة

MMBT4401-7-F

الحزمة ： الحزمة

SOT-23-3 (2.90 x 1.30 x 1.00 mm)

الوصف

نظرة عامة على المنتج

The MMBT4401-7-F from onsemi is an NPN general-purpose small-signal transistor in a compact SOT-23-3 surface-mount package. It offers a VCEO of 40V, continuous collector current of 600mA, and DC current gain of 100-300 at 150mA, making it suitable for medium-power switching and amplification in space-constrained applications.

المواصفات الرئيسية

النوع	NPN General-Purpose Transistor
VCEO	40V
IC (Continuous)	600mA
hFE (كسب التيار المستمر)	100 ~ 300 @ IC=150mA
VCE(sat)	0.75V (Max) @ IC=500mA, IB=50mA
fT (Transition Frequency)	250MHz (Typical)
تبديد الطاقة	350mW @ TA=25°C
الحزمة	SOT-23-3 (TO-236-3)
درجة حرارة التشغيل	-55°C ~ +150°C

الميزات

High current capability (600mA) in a small SOT-23 package
Wide hFE range for design flexibility
Low saturation voltage for efficient switching
High transition frequency (250MHz) for RF applications
Lead-free and RoHS compliant
Tape and reel packaging for automated assembly

التطبيقات

General-purpose switching and amplification
LED driver circuits
Relay and solenoid drivers
Logic-level translation
Power management load switches

مقدمة المنتج:MMBT4401-7-F مقدمة المنتج

The MMBT4401-7-F is an NPN general-purpose bipolar junction transistor from onsemi in a surface-mount SOT-23-3 package. It is the SMD equivalent of the popular 2N4401 through-hole transistor, offering 40V collector-emitter breakdown voltage and 600mA continuous collector current. The device features a DC current gain (hFE) of 100 to 300 at 150mA collector current, making it well-suited for medium-power driver and switching applications. The 250MHz transition frequency enables use in RF amplifier stages. Its combination of moderate current handling, wide gain bandwidth, and compact footprint makes it a versatile choice for general-purpose circuit design.

مبدأ العمل:MMBT4401-7-F مبدأ العمل

The MMBT4401 operates as a bipolar junction transistor (BJT) in common-emitter, common-base, or common-collector configurations. In the active region, a small base current (IB) controls a proportionally larger collector current (IC) according to the DC current gain hFE = IC/IB. For switching applications, the transistor is driven between cutoff (IB=0, IC approximately 0) and saturation (VCE approximately VCE(sat)). The base-emitter junction is forward-biased at approximately 0.7V to turn the device on. In saturation, both junctions are forward-biased and VCE drops to typically 0.4-0.75V depending on IC and IB. The 250MHz transition frequency (fT) represents the frequency at which the common-emitter current gain drops to unity.

وصف الدبوس:MMBT4401-7-F تعريف الدبوس ووظائفه

دبوس	الاسم	الوظيفة
1	القاعدة	Control input
2	الباعث	Current output
3	جامع التحصيل	Main current terminal

Application Scenarios:In which products and applications isMMBT4401-7-F مستعمل

LED Array Driver: 600mA capability drives multiple high-brightness LEDs with PWM dimming through base current control
Relay/Solenoid Switch: Low VCE(sat) minimizes power dissipation when driving 5V/12V relay coils up to 600mA
Logic Level Shifter: Shifts 3.3V logic to 5V or 12V domain using common-emitter switch configuration
Small-Signal RF Amplifier: 250MHz fT enables use as VHF preamplifier or mixer in the 50-150MHz range

Alternative Models:What chips are recommended as replacements for MMBT4401-7-F

الطراز	الشركة المصنعة	الفرق الرئيسي
MMBT4403-7-F	أونسمي	PNP complement of MMBT4401
MMBT2222A-7-F	أونسمي	Similar, 40V/600mA, 300MHz fT
BC847C	نيكسبيريا	45V/100mA, higher hFE (420-800)
MMBT3904-7-F	أونسمي	40V/200mA, lower power, 300MHz fT
MMBT5551-7-F	أونسمي	160V/600mA, high-voltage version