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MM3Z8V2ST1G

300mW Zener Diode, 8.2V nominal, 5%, 15Ohm ZZT, SOD-323

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جزء الشركة المصنعة ： جزء الشركة المصنعة

MM3Z8V2ST1G

الحزمة ： الحزمة

SOD-323 (2.5 x 1.25 x 0.85 mm)

الوصف

نظرة عامة على المنتج

The MM3Z8V2ST1G from onsemi is a 300 mW Zener voltage regulator diode with 8.2 V nominal Zener voltage and 5% tolerance in a SOD-323 surface mount package.

المواصفات الرئيسية

النوع	Zener Voltage Regulator Diode
Zener Voltage (Nominal)	8.2 V
Zener Voltage Range	7.79 V to 8.61 V
تبديد الطاقة	300 mW
Zener Impedance (ZZT)	15 Ohm @ IZT=5mA
Leakage Current (IR)	0.5 uA @ VR=6V
الحزمة	SOD-323 (2.5 x 1.25 mm)
درجة حرارة التشغيل	-65C to +150C

الميزات

8.2 V nominal Zener voltage with 5% tolerance
300 mW power dissipation in compact SOD-323
Low Zener impedance of 15 Ohm
Low leakage current (0.5 uA at 6V)
Small footprint for high-density PCBs

التطبيقات

Voltage regulation and reference
Signal clipping and clamping
Overvoltage protection for signal lines
Level shifting and bias networks
General purpose voltage stabilization

مقدمة المنتج:MM3Z8V2ST1G مقدمة المنتج

The MM3Z8V2ST1G from onsemi is a 300 mW surface mount Zener voltage regulator diode with a nominal Zener voltage of 8.2 V and 5% tolerance. The compact SOD-323 package provides high power density in a small footprint for space-constrained applications. The 15 Ohm Zener impedance at IZT=5mA provides stable voltage regulation with moderate load variation. The 0.5 uA low leakage current at 6 V reverse voltage minimizes power waste in bias networks. This device is part of the MM3Z series covering Zener voltages from 2.4 V to 75 V in the same package.

مبدأ العمل:MM3Z8V2ST1G مبدأ العمل

The MM3Z8V2ST1G operates as a Zener diode in the reverse breakdown region. When reverse-biased voltage exceeds the Zener breakdown voltage (8.2 V nominal), the diode enters the breakdown region where current increases sharply while maintaining a nearly constant voltage across its terminals. This voltage regulation property results from the Zener breakdown mechanism and avalanche multiplication at the 8.2 V level. The 15 Ohm Zener impedance determines the sensitivity of the Zener voltage to changes in operating current. In forward bias, the device behaves as a standard silicon diode with approximately 0.7 V forward voltage. The 300 mW power dissipation rating is achievable when the SOD-323 package is properly mounted on a PCB with adequate thermal relief.

وصف الدبوس:MM3Z8V2ST1G تعريف الدبوس ووظائفه

دبوس	الاسم	النوع	الوظيفة
1	القطب السالب	Terminal	Cathode (marked with band)
2	الأنود	Terminal	الأنود

Application Scenarios:In which products and applications isMM3Z8V2ST1G مستعمل

8.2V bias reference for analog circuitry
Overvoltage clamping on signal and data lines
Level shifting between logic voltage domains
Op-amp supply voltage reference and stabilization
General purpose voltage regulation in compact designs

Alternative Models:What chips are recommended as replacements for MM3Z8V2ST1G

الشركة المصنعة	رقم الجزء	الحزمة	الملاحظات
أونسمي	MM3Z6V8ST1G	SOD-323	6.8V variant in same series
نيكسبيريا	BZX84-C8V2,215	SOT-23	8.2V Zener, 300mW, SOT-23
فيشاي	BZX55C8V2-TAP	DO-35	8.2V, through-hole, 500mW
شركة ديودز	MMSZ8V2ST1G	SOD-123	8.2V, 500mW, slightly larger
NXP	BZX84-B8V2,215	SOT-23	8.2V, 2% tolerance, 300mW