نظرة عامة على المنتج
The IRFR5305TRPBF from Infineon/IR is a -55V, -31A P-channel enhancement-mode power MOSFET in a DPAK package. With an ultra-low 65m ohm maximum RDS(ON) at VGS=-10V and 50W power dissipation rating, it is designed for high-current load switching, motor drive, and battery management applications requiring efficient high-side control.
المواصفات الرئيسية
| النوع | P-channel enhancement-mode |
| Drain-Source Voltage (VDSS) | -55V |
| Continuous Drain Current (ID) | -31A (25C, TC) |
| RDS(ON) | 65m ohm max @ VGS=-10V |
| Gate Threshold (VGS(th)) | -2.0V ~ -4.0V |
| تبديد الطاقة | 50W (25C, TC) |
| Transconductance | 22S typical |
| Input Capacitance | 2800pF typical |
| درجة حرارة التشغيل | -55C ~ +175C |
الميزات
- Ultra-low 65m ohm RDS(ON) for minimal conduction losses
- -31A continuous current rating for high-power loads
- 50W power dissipation with DPAK thermal pad
- Fully avalanche rated for rugged inductive switching
- -55V rating suitable for 48V battery systems
التطبيقات
- High-side load switching in automotive and industrial systems
- DC motor drive and direction control
- Battery management and protection circuits
- Power tool and UPS inrush current limiting
- Hot-swap and OR-ing controllers