نظرة عامة على المنتج
The IRF7341TRPBF from Infineon Technologies is a dual N-channel HEXFET power MOSFET with 55V drain-source voltage, 50 mΩ max on-resistance, and 4.7A continuous drain current per channel in an SO-8 surface-mount package. Using 5th-generation HEXFET technology, it provides ultra-low on-resistance per silicon area for compact power management applications.
المواصفات الرئيسية
- Configuration: Dual N-Channel
- VDS: 55V
- VGS: ±20V
- ID: 4.7A per channel (TC=25°C)
- IDM: 38A (pulsed)
- RDS(on): 43 mΩ typ, 50 mΩ max @ VGS=10V, ID=4.7A
- RDS(on): 56 mΩ typ, 65 mΩ max @ VGS=4.5V, ID=3.8A
- VGS(th): 1.0V min (ID=250µA)
- Qg: 24 nC typ, 36 nC max @ VDS=44V, VGS=10V
- Qgd: 7.0 nC typ
- Ciss: 740 pF @ VDS=25V
- PTOT: 2W per channel
- trr: 60 ns typ (body diode)
- EAS: 72 mJ (single pulse avalanche)
- Operating Temperature: -55°C ~ 150°C
- Package: SO-8 (3.90mm width)
الميزات
- 5th-generation HEXFET technology for lowest RDS(on) per area
- Logic-level gate drive (fully enhanced at 4.5V)
- Dynamic dV/dt rating for rugged switching
- Dual-die SO-8 package with enhanced thermal characteristics
- 100% avalanche tested
- Low gate charge for efficient high-frequency switching
التطبيقات
- DC-DC converter synchronous rectification
- Battery management and charging circuits
- Motor drive half-bridge stages
- Load switching and power routing
- Industrial power management