نظرة عامة على المنتج
The IRF3415STRLPBF is an N-channel HEXFET power MOSFET from Infineon Technologies featuring 150V VDSS, 43A ID, and 42 mOhm RDS(ON) max in a D2PAK (TO-263AB) surface-mount package. Fifth-generation HEXFET technology achieves extremely low on-resistance per silicon area.
المواصفات الرئيسية
| نوع القناة | N-Channel Enhancement |
| Drain-Source Voltage (VDSS) | 150 V |
| Continuous Drain Current (ID) | 43 A (at TC=25°C) |
| RDS(ON) max | 42 mOhm @ VGS=10V |
| Gate Threshold Voltage | 2.0 V to 4.0 V |
| Total Gate Charge (Qg) | 78 nC typical |
| تبديد الطاقة | 200 W (at TC=25°C) |
| Input Capacitance (Ciss) | 2400 pF typical |
| درجة حرارة التشغيل | -55°C to +175°C (Tj) |
| الحزمة | D2PAK / TO-263AB |
الميزات
- Fifth-generation HEXFET with advanced process technology
- Extremely low RDS(ON): 42 mOhm max at VGS=10V
- Avalanche rated for rugged applications
- Improved dv/dt capability for noise immunity
- 175°C operating junction temperature
- Surface-mount D2PAK package for high-power applications
- Lead-free (Pb-free) construction
التطبيقات
- Switch-mode power supplies (SMPS)
- Motor drives and inverters
- محولات DC-DC
- Uninterruptible power supplies
- Active rectification