نظرة عامة على المنتج
The FQD17P06TM from onsemi (formerly Fairchild) is a P-channel enhancement-mode power MOSFET rated at -60 V VDS and -12 A ID in a DPAK (TO-252) surface-mount package. Using proprietary planar stripe DMOS technology, it achieves RDS(on) of 135 mΩ max at VGS = -10 V with low gate charge of 21 nC, making it suitable for switched-mode power supplies, audio amplifiers, DC motor control, and load switching in consumer and industrial applications.
المواصفات الرئيسية
| VDS (جهد مصدر التصريف-المصرف) | -60 V |
| ID (Continuous, TC=25°C) | -12 A |
| RDS(on) @ VGS=-10V, ID=-6A | 110 mΩ (typ), 135 mΩ (max) |
| VGS(th) Range | -2.0 فولت إلى -4.0 فولت |
| Qg (Total Gate Charge, typ) | 21 nC |
| طاقة الانهيار الجليدي (EAS) | 300 mJ (single pulse) |
| Crss (typ) | 80 pF |
| Power Dissipation (TC=25°C) | 44 W |
| Operating Junction Temp | -55 درجة مئوية إلى +150 درجة مئوية |
الميزات
- P-channel QFET with low RDS(on) of 135 mΩ max for efficient high-side switching
- Low gate charge (21 nC typical) and low Crss (80 pF) for fast switching
- 100% avalanche tested for rugged reliability in unclamped inductive applications
- Planar stripe DMOS technology for low on-resistance and superior switching performance
- DPAK surface-mount package for compact PCB design
التطبيقات
- Switched-mode power supplies (SMPS) as high-side switch
- Audio amplifier output stages
- DC motor control and bridge circuits
- LCD/LED TV power management
- Load switching and battery protection circuits