نظرة عامة على المنتج
The FQD11P06TM from onsemi is a P-Channel QFET power MOSFET rated at -60V VDSS and -9.4A ID with maximum RDS(ON) of 185mOhm. It features low gate charge (13nC typical) and 100% avalanche testing in a DPAK-3 (TO-252) surface-mount package.
المواصفات الرئيسية
| VDS (Max) | -60V |
| ID (Continuous, TC=25C) | -9.4A |
| IDM (Pulse) | -37.6A |
| RDS(ON) Max | 185 mOhm @ VGS=-10V |
| VGS(th) | -2.0V to -4.0V |
| Qg (Typical) | 13 nC @ VGS=-10V |
| Ciss (Typical) | 420 pF |
| Crss (Typical) | 45 pF |
| EAS (Single Pulse Avalanche) | 160 mJ |
| PD (TC=25C) | 38W |
| الحزمة | DPAK-3 / TO-252-3 |
الميزات
- Low RDS(ON) of 185mOhm at VGS=-10V
- Low gate charge of 13nC for fast switching
- 100% avalanche tested for reliability
- Low Crss of 45pF for reduced Miller effect
- Optimized for LCD/LED TV applications
التطبيقات
- LCD and LED TV power management
- Switching power supplies
- محولات DC-DC
- Motor drive and control circuits
- Load switching and power management