الصفحة الرئيسية > الدوائر المتكاملة الدوائر المتكاملة > CY7C1069G30-10ZSXI

CY7C1069G30-10ZSXI

16Mbit (1Mx16) synchronous SRAM, 10ns access, 3.3V, 54-ball VFBGA

3280

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جزء الشركة المصنعة ： جزء الشركة المصنعة

CY7C1069G30-10ZSXI

الحزمة ： الحزمة

54-Ball VFBGA (8.0 x 13.0 x 1.0 mm)

الوصف

نظرة عامة على المنتج

The CY7C1069G30-10ZSXI is an Infineon (formerly Cypress) 16-Mbit (2 Mbyte) synchronous SRAM organized as 1M x 16. It operates at 3.3 V with a 10 ns access time (100 MHz clock rate), supporting high-performance cache and buffer applications. The device is packaged in a 54-ball VFBGA and rated for -40°C to +85°C.

المواصفات الرئيسية

الكثافة	16 Mbit (2 MB)
Organization	1M x 16
Access Time	10 ns (100 MHz)
جهد الإمداد	3.3 V
الواجهة	Synchronous SRAM
الحزمة	54-Ball VFBGA

الميزات

16 Mbit (2 MB) capacity
1M x 16 organization
10 ns access time (100 MHz)
3.3 V single supply
Synchronous burst interface
54-ball VFBGA package

التطبيقات

Processor L2 cache
Networking buffer memory
DSP scratchpad memory
High-speed data buffering

مقدمة المنتج:CY7C1069G30-10ZSXI مقدمة المنتج

The CY7C1069G30-10ZSXI is an Infineon 16-Mbit synchronous SRAM organized as 1M x 16 bits. With 10 ns access time supporting 100 MHz clock rate, it is designed for high-performance cache and buffer applications in networking and computing systems. The synchronous interface supports burst read/write operations with internally controlled address incrementing, maximizing bandwidth for sequential data transfers. The 3.3 V single supply and 54-ball VFBGA package provide a compact solution for space-constrained designs. The device operates from -40°C to +85°C.

مبدأ العمل:CY7C1069G30-10ZSXI مبدأ العمل

The CY7C1069G30 operates as a synchronous SRAM with clock-driven operation. All inputs (address, data, control) are registered on the rising edge of the clock (CLK), eliminating setup time uncertainty and enabling high-speed pipelined operation. During a read cycle, the addressed data is driven onto the data bus after the clock-to-output delay (10 ns). During a write cycle, input data is registered and written to the addressed location. The synchronous burst mode automatically increments the internal address counter for consecutive reads or writes, reducing address bus bandwidth requirements. Byte-write capability allows selective writing of upper and lower bytes independently.

وصف الدبوس:CY7C1069G30-10ZSXI تعريف الدبوس ووظائفه

54-ball VFBGA with key signal groups: A0-A19 (address inputs), DQ0-DQ15 (data I/O), CLK (clock), ADV/LD (address advance/load), CE1, CE2 (chip enables), OE (output enable), WE (write enable), BWa, BWb (byte writes), MODE (burst mode select), VDD (3.3V supply), VSS (ground), and ZZ (sleep mode). Refer to the datasheet pin diagram for complete 54-ball mapping.

Application Scenarios:In which products and applications isCY7C1069G30-10ZSXI مستعمل

Processor L2 cache memory with 10ns access time for high-performance computing
Networking packet buffer memory with 100MHz synchronous burst capability
DSP scratchpad and coefficient storage for real-time signal processing
High-speed data acquisition buffering with 1Mx16 organization

Alternative Models:What chips are recommended as replacements for CY7C1069G30-10ZSXI

الطراز	الشركة المصنعة	الفرق الرئيسي
CY7C1069GV30	إنفينيون	Same density, different package
IS61WV102416BLL	ISSI	Similar 16Mbit async SRAM
AS6C1616	Alliance	16Mbit low-power SRAM
CY7C1049	إنفينيون	4Mbit version