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CD4012BE

Dual 4-input NAND gate, CMOS 3-18V, 60ns, PDIP-14

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جزء الشركة المصنعة ： جزء الشركة المصنعة

CD4012BE

الحزمة ： الحزمة

PDIP-14 (19.3 x 6.35 x 4.57mm, 2.54mm pitch, through-hole)

العلامة التجارية ： العلامة التجارية

فئات المنتجات:：فئات المنتجات

الدوائر المتكاملة الدوائر المتكاملة, واجهة ICs

توصيات أخرى قد تكون مهتماً بها.

SII9396SCNUC-BAR

IS43TR16256BL-125KBLI

الوصف

نظرة عامة على المنتج

The CD4012BE from Texas Instruments contains two independent 4-input NAND gates — the CMOS counterpart of the SN74LS20N for 3V-18V systems in a 14-pin PDIP package.

المواصفات الرئيسية

Number of Gates	2 (dual 4-input NAND)
Technology	CD4000B CMOS
جهد الإمداد	3V to 18V
تأخير الانتشار	60ns typical @ VDD=10V
تيار التهدئة	0.01µA typical @ 25°C
درجة حرارة التشغيل	-55 درجة مئوية إلى +125 درجة مئوية
الحزمة	PDIP-14 (19.3 x 6.35mm)

الميزات

Dual 4-input NAND gates
Wide supply voltage: 3V to 18V
Output LOW only when all four inputs are HIGH
Near-zero quiescent current

التطبيقات

Multi-condition decoding
Address decoding in CMOS systems
Control logic for battery-powered designs
General CMOS logic

مقدمة المنتج:CD4012BE مقدمة المنتج

The CD4012BE from Texas Instruments contains two independent 4-input NAND gates. Each gate implements Y = NOT(A AND B AND C AND D); the output goes LOW only when all four inputs are simultaneously HIGH. The CD4012 is the CMOS equivalent of the TTL 7420, with the advantage of 3V-18V supply range and near-zero quiescent current. The 4-input NAND is essential for address decoding and multi-condition logic in CMOS systems. For example, to generate an active-LOW chip select when a 4-bit address matches a specific pattern, the CD4012 directly provides the decoded output. The wide supply range allows the CD4012 to be used in 12V automotive systems, 9V battery circuits, and 3.3V/5V digital logic — all with the same IC. The BE suffix denotes the PDIP-14 package.

مبدأ العمل:CD4012BE مبدأ العمل

Each 4-input NAND gate in the CD4012BE performs Y = (A·B·C·D)’. The output is LOW only when all four inputs A, B, C, D are HIGH. For any other combination (at least one input LOW), the output is HIGH. The CMOS implementation uses a series PMOS network connecting the output to VDD (when any input is LOW, the PMOS network conducts, pulling output HIGH) and a series NMOS network connecting the output to VSS (when all inputs are HIGH, the NMOS network conducts, pulling output LOW). This series structure for 4 inputs is more complex than 2-input gates but provides the same basic NAND function with wider input capability. Unused inputs must be tied to VDD or VSS — never left floating (CMOS inputs are very high impedance and will drift to undefined levels). Tie unused inputs to VDD to make them logically ‘1’ (don’t care in NAND).

وصف الدبوس:CD4012BE تعريف الدبوس ووظائفه

دبوس	الاسم	النوع	الوصف
1	1Y	المخرجات	Gate 1 output
2	1A	المدخلات	Gate 1 input A
3	1B	المدخلات	Gate 1 input B
4	1C	المدخلات	Gate 1 input C
5	1D	المدخلات	Gate 1 input D
6	نورث كارولاينا	—	No connection
7	VSS	الطاقة	أرضي
8	نورث كارولاينا	—	No connection
9	2A	المدخلات	Gate 2 input A
10	2B	المدخلات	Gate 2 input B
11	2C	المدخلات	Gate 2 input C
12	2D	المدخلات	Gate 2 input D
13	2Y	المخرجات	Gate 2 output
14	VDD	الطاقة	Supply (3V to 18V)

CD4012BE uses the PDIP-14 package with standard CMOS 4000-series pinout convention: VDD at Pin 14, VSS at Pin 7. Each of the two NAND gates uses four input pins and one output pin — Gate 1 uses Pins 1-4 (inputs) and Pin 13 (output), Gate 2 uses Pins 9-12 (inputs) and Pin 6 (output). Pins 5 and 8 are not connected internally. All unused CMOS inputs MUST be tied to VDD or VSS to prevent floating-gate oscillation and excessive supply current. The CD4012BM is the SOIC-14 surface-mount equivalent with identical pinout. For TTL-compatible input levels, the 74HC20 (2.0-6.0V) or 74LS20 (4.75-5.25V) provides the same dual 4-input NAND function.

Application Scenarios:In which products and applications isCD4012BE مستعمل

4-Bit Address Decode: 4 address lines (with inverters as needed) → 1A-1D; 1Y goes LOW only for target address; 1Y → active-LOW chip select
All-HIGH Detection: 4 status signals → A,B,C,D; Y = LOW when all 4 are HIGH; all-systems-go detector (inverted)
12V Logic Decode: VDD=12V; 4 control signals at 12V levels; NAND output drives 12V logic directly; no level shifting needed
Battery-Powered Gating: VDD=9V battery; 4 sensor inputs; NAND output = alarm when all sensors active; near-zero standby current

Alternative Models:What chips are recommended as replacements for CD4012BE

الطراز	الشركة المصنعة	الفرق الرئيسي	الحزمة	Supply
CD4012BM	TI	SOIC-14 surface-mount version with identical logic function and 3-18V range	SOIC-14	3-18V
CD4012BE	TI	Through-hole DIP version for prototyping and legacy board repair	DIP-14	3-18V
HEF4012BT	NXP	Pin-compatible CMOS version with improved ESD protection and 3-15V supply	SOIC-14	3-15V
MC144012BDR2G	أونسمي	Pin-compatible equivalent with RoHS compliance and AEC-Q100 automotive option	SOIC-14	3-18V
74HC20D	TI/Nexperia	HC CMOS version with higher speed and 2-6V supply for modern logic systems	SOIC-14	2-6V
74HC20N	TI/Nexperia	HC CMOS through-hole version for prototyping with 2-6V supply range	DIP-14	2-6V
74HCT20D	نيكسبيريا	HCT version with TTL-compatible inputs for mixed 5V TTL/CMOS systems	SOIC-14	4.5-5.5V

CD4012 is the CMOS 4000-series dual 4-input nand gate operating over the wide 3-18V supply range. The HEF4012 (NXP) and MC144012 (onsemi) are direct pin-compatible equivalents. For higher speed at the cost of narrower voltage range, the 74HC20 HC/HCT families offer significantly faster propagation delay and lower power consumption at 2-6V. Surface-mount versions use the BM/M suffix (SOIC); through-hole versions use the BE suffix (DIP).