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2N7002K-7

60V N-ch MOSFET, 380mA, 2Ω Rds, ESD 2kV, logic-level, SOT-23-3

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جزء الشركة المصنعة ： جزء الشركة المصنعة

2N7002K-7

الحزمة ： الحزمة

SOT-23-3 (TO-236-3, 2.9 x 1.3 x 1.0mm, surface mount)

الوصف

نظرة عامة على المنتج

The 2N7002K-7 is a 60V N-channel enhancement-mode small-signal MOSFET from Diodes Incorporated with 380mA drain current, 2Ω RDS(on), ESD protection, and logic-level gate drive in a SOT-23-3 package.

المواصفات الرئيسية

VDS (جهد مصدر التصريف-المصرف)	60V
المعرف (تيار التصريف المستمر)	380mA @ TA=25°C (1 sq in pad)
RDS(on) Max	2.0Ω @ VGS=10V, ID=500mA
RDS(on) Max (Logic Level)	3.0Ω @ VGS=5V, ID=50mA
VGS(th) (عتبة البوابة)	1.0V to 2.5V @ ID=250µA
VGS (جهد مصدر البوابة)	±20V max
Qg (إجمالي شحنة البوابة)	0.3nC typical @ VGS=4.5V
Ciss (سعة الإدخال)	30pF typical @ VDS=25V
تصنيف ESD (HBM)	2000V
تبديد الطاقة	370mW (minimum pad), 540mW (1 sq in pad)
RθJA	357°C/W (minimum pad), 240°C/W (1 sq in pad)
درجة حرارة التشغيل	-55 درجة مئوية إلى +150 درجة مئوية
الحزمة	SOT-23-3 (2.9 x 1.3mm, surface mount)

الميزات

60V N-channel enhancement-mode MOSFET
ESD protected gate (2000V HBM)
Low RDS(on): 2Ω max at VGS=10V
Logic-level gate drive (5V compatible)
Extremely low gate charge: 0.3nC typical
Low input capacitance: 30pF typical
Halogen-free and BFR-free
Industry-standard SOT-23-3 footprint

التطبيقات

Low-side load switch
Level shifting circuits
DC-DC converter switching
Portable device power management
MCU GPIO load driving

مقدمة المنتج:2N7002K-7 مقدمة المنتج

The 2N7002K-7 from Diodes Incorporated is a 60V N-channel enhancement-mode small-signal MOSFET in an SOT-23-3 surface-mount package. It offers 380mA continuous drain current with 2Ω maximum on-resistance at VGS=10V, and 3Ω at VGS=5V, making it compatible with both 5V and 3.3V logic-level gate drive. The device features built-in ESD protection rated at 2000V HBM on the gate, protecting against handling and assembly damage. The extremely low 0.3nC total gate charge and 30pF input capacitance enable fast switching with minimal drive power, allowing direct MCU GPIO drive without gate driver ICs. The -7 suffix denotes tape-and-reel packaging with 3000 units per reel. The K suffix distinguishes this improved version from the classic 2N7002, offering lower RDS(on) and ESD protection.

مبدأ العمل:2N7002K-7 مبدأ العمل

The 2N7002K-7 is an enhancement-mode N-channel MOSFET that remains off (non-conducting) when VGS = 0V. When VGS exceeds the threshold voltage (1.0V to 2.5V), an inversion layer forms under the gate oxide, creating a conductive channel between drain and source. At VGS = 5V (logic level), the channel is partially enhanced, giving RDS(on) of 3Ω max—sufficient for switching loads up to 100mA with minimal voltage drop. At VGS = 10V, the channel is fully enhanced, and RDS(on) drops to 2Ω max. The 0.3nC gate charge means the gate capacitance can be charged and discharged very quickly, enabling switching times in the nanosecond range. With an MCU GPIO pin capable of sourcing/sinking 4-8mA, the gate can transition from 0V to 3.3V or 5V in approximately Qg × ΔV / I = 0.3nC × 5V / 4mA ≈ 0.4ns (theoretical minimum; actual switching limited by PCB parasitics). The ESD protection on the gate consists of clamping structures that shunt overvoltage transients away from the thin gate oxide, preventing dielectric breakdown during handling.

وصف الدبوس:2N7002K-7 تعريف الدبوس ووظائفه

دبوس	الاسم	النوع	الوصف
1	البوابة	المدخلات	Gate control terminal. ESD-protected gate (K suffix) with integrated back-to-back diodes for ±2kV HBM protection. Logic-level threshold VGS(th) = 1.0-2.5V allows direct drive from 3.3V and 5V microcontrollers. Gate charge Qg = 3.9nC typical enables fast switching.
2	المصدر	ناتج الطاقة	Source terminal typically connected to ground in low-side switching configuration. Continuous drain current 300mA at TA=25°C. Internal body diode forward voltage VSD ≈ 0.95V. On-resistance RDS(on) = 1.2Ω max at VGS=10V, ID=200mA.
3	الصرف	ناتج الطاقة	Drain terminal connects to the load through a pull-up resistor or directly. Maximum VDS = 60V provides good voltage margin for 5V-24V switching applications. Drain-source leakage current is 1µA max at VDS=48V, VGS=0V. Suitable for relay driving, LED control, and level shifting.

2N7002K-7 pin assignment (SOT-23-3, top view): Pin 1 (left) = Gate, Pin 2 (center, tab) = Source, Pin 3 (right) = Drain. The K suffix adds ESD protection on the gate. The non-ESD version is 2N7002-7. For level-shifting applications, BSS138 offers lower threshold voltage (0.8V) for sub-3.3V operation. For higher current, SI2302CDS provides 2.2A with 62mΩ RDS(on).

Application Scenarios:In which products and applications is2N7002K-7 مستعمل

MCU Load Switch: 5V or 3.3V GPIO directly drives gate; 380mA capability switches LEDs, relays (via coil driver), or small motors
Level Shifter: Open-drain configuration shifts 3.3V logic to 5V or higher; pull-up resistor on drain sets HIGH level
Power Gating: Low-side switch disconnects peripheral VCC rail; 2Ω at 100mA = only 200µV drop (negligible)
DC-DC Switch: 0.3nC Qg supports 1MHz+ switching in tiny buck/boost converters at <100mA load
Battery Protection: 60V standoff handles 2-cell LiPo (8.4V) with huge margin; gate pull-down ensures off during sleep

Alternative Models:What chips are recommended as replacements for 2N7002K-7

الطراز	الشركة المصنعة	الفرق الرئيسي	الحزمة	Specs
2N7002ET1G	أونسمي	Same class, 60V/300mA, SOT-23-3, equivalent	-	-
BSS138-7-F	شركة ديودز	50V/200mA, lower threshold (1.5V), SOT-23-3	-	-
2N7002K-T1-GE3	فيشاي	Same class, 60V/300mA, SOT-23-3	-	-
DMN2075U-7	شركة ديودز	20V/4.2A, much lower Rds, SOT-23-3	-	-
SI2302DS-T1-GE3	فيشاي	20V/2.2A, logic-level, lower Rds, SOT-23-3	-	-

2N7002K-7 is a 60V/300mA N-channel MOSFET from onsemi in SOT-23-3 with ESD protection. The 2N7002-7 provides the same without ESD gate protection. The BSS138-7-F offers lower VGS(th) of 1.0V for sub-3.3V operation. The SI2302CDS provides 20V/2.2A with 62mΩ for higher current switching. The DMN2075U offers 20V/750mA from Diodes Inc. The AO3400A from Alpha & Omega provides 30V/5A with 26mΩ. For dual N-channel, 2N7002DW provides two MOSFETs in SOT-363.