Product Overview
The PMV65XP from Nexperia is a -20V, -4.3A P-Channel enhancement mode Trench MOSFET with 74 mΩ max on-resistance at VGS=-4.5V in a compact SOT-23 package. Featuring low threshold voltage (-0.65V typical) and Trench MOSFET technology, it is optimized for low-power DC-DC converters, load switching, and battery management in portable equipment.
Key Specifications
| Channel Type | P-channel enhancement mode |
| VDS (max) | -20V |
| ID (max) | -4.3A @ TA=25°C |
| RDS(on) @ VGS=-4.5V | 74 mΩ max |
| RDS(on) @ VGS=-2.5V | 92 mΩ max |
| VGS(th) (typ) | -0.65V |
| VGS (max) | ±12V |
| QG @ VGS=-4.5V | 7.7 nC typical |
| QGD | 1.65 nC typical |
| CISS | 744 pF typical |
| COSS | 65 pF typical |
| Ptot | 480 mW @ TA=25°C |
| Operating Temperature | -55°C to +150°C |
| Package | SOT-23 / TO-236AB (2.9×1.3×1.0 mm) |
Features
- Low threshold voltage: -0.65V typical for low-voltage drive
- Low on-resistance: 74 mΩ at VGS=-4.5V
- Trench MOSFET technology for high power density
- Compact SOT-23 package for space-constrained designs
- Low gate charge: 7.7 nC for efficient switching
- Suitable for 2.5V and 3.3V logic drive
Applications
- Low-power DC-DC converters (buck, boost)
- Load switching and power routing
- Battery management and protection
- Battery-powered portable equipment