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MURS160-13-F

1A 600V Ultra-Fast Rectifier, 35ns trr, 1.05V VF, SMA

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Manufacturer Part：

MURS160-13-F

Package：

SMA (DO-214AC, 5.20 x 2.60 x 2.15 mm)

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Description

Product Overview

The MURS160-13-F from Diodes Incorporated is a 1 A, 600 V ultra-fast recovery rectifier diode with 35 ns reverse recovery time in an SMA (DO-214AC) surface mount package.

Key Specifications

Type Ultra-Fast Recovery Rectifier Diode
Reverse Voltage (VRRM) 600 V
Average Forward Current (IFAV) 1 A
Forward Voltage (VF) 1.05 V (max) @ IF=1A
Reverse Recovery Time (trr) 35 ns (typical)
Reverse Leakage (IR) 5 uA (max) @ VR=600V
Peak Surge Current (IFSM) 30 A
Package SMA (DO-214AC)
Operating Temperature -65C to +150C (junction)

Features

  • 600 V reverse voltage rating
  • Ultra-fast 35 ns reverse recovery time
  • 1 A average forward current
  • Low 1.05 V forward voltage at 1 A
  • SMA surface mount package
  • Low reverse leakage current (5 uA max)

Applications

  • Switching power supply output rectification
  • Freewheeling diode in inductive load circuits
  • PFC boost diode in power factor correction
  • Snubber and clamp circuits

The MURS160-13-F from Diodes Incorporated is a 1 A, 600 V ultra-fast recovery rectifier diode with a 35 ns typical reverse recovery time. The fast recovery characteristic minimizes switching losses in high-frequency power conversion circuits operating at tens to hundreds of kilohertz. The 600 V reverse voltage rating supports offline switch-mode power supply and PFC applications. The 1.05 V maximum forward voltage at 1 A provides moderate conduction loss. The SMA surface mount package offers a compact footprint with adequate thermal performance for 1 A applications.

The MURS160-13-F uses a PIN (P-type / Intrinsic / N-type) epitaxial diode structure optimized for fast recovery. When forward-biased, holes are injected from the P-region and electrons from the N-region into the intrinsic layer, creating a low-resistance conduction path. When the bias reverses, the stored charge in the intrinsic layer must be removed before the diode blocks current. The ultra-fast 35 ns recovery time is achieved through platinum or gold diffusion lifetime killing, which creates recombination centers that rapidly absorb the stored minority carriers during turn-off. This drastically reduces the reverse recovery current spike and associated switching losses compared to standard recovery diodes. The tradeoff is slightly higher forward voltage (1.05 V vs. 0.7 V for standard diodes) due to the modified carrier lifetime.

Pin Name Type Function
1 Cathode Terminal Cathode (indicated by polarity band)
2 Anode Terminal Anode
  • Switch-mode power supply output rectifier at 100-500kHz
  • PFC boost converter freewheeling diode in CCM mode
  • Inductive load snubber and RCD clamp diode
  • Motor drive inverter antiparallel freewheeling diode
Manufacturer Part Number Package Notes
onsemi MURS160T3G SMA Pin-compatible equivalent
ST STTH1R06A SMA 1A 600V, ultra-fast
Vishay US1M-E3/61T SMA 1A 1000V, ultra-fast
Diodes Inc MURS120-13-F SMA 1A 200V, same series
onsemi MURS360T3G SMA 3A 600V, higher current
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Contact Information

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Service & Packaging

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Address: Room 2919, Guoli Building, Huaqiang North, Futian District, Shenzhen, Guangdong, China
 

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