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MMBT4401LT1G

NPN GP Transistor, 40V 600mA, 250MHz, SOT-23

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Manufacturer Part：

MMBT4401LT1G

Package：

SOT-23-3 (2.9 x 1.3 x 1.0 mm)

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Description

Product Overview

The MMBT4401LT1G from onsemi is a 40V, 600mA NPN general-purpose amplifier transistor with 250 MHz fT in a SOT-23-3 package.

Key Specifications

Type NPN General-Purpose Amplifier Transistor
VCEO 40 V
IC 600 mA (continuous)
Power Dissipation 225 mW @ TA=25C
hFE 40 ~ 500 @ IC=10mA
VCE(sat) 0.75 V (max) @ IC=500mA
fT 250 MHz (typical)
Package SOT-23-3
Operating Temperature -55C to +150C

Features

  • 40V, 600mA medium-power NPN
  • 250 MHz transition frequency
  • Complementary PNP: MMBT4403LT1G
  • LT1G suffix: lead-free tape and reel
  • Pb-free and RoHS compliant

Applications

  • Medium-current driver and switch
  • Audio preamplifier
  • LED and relay driver
  • General-purpose amplification

The MMBT4401LT1G from onsemi is the surface-mount equivalent of the popular 2N4401 NPN transistor, offering 40V VCEO and 600mA IC in a compact SOT-23-3 package. The 250 MHz transition frequency supports medium-frequency amplification and fast switching. The wide hFE range of 40-500 at 10mA provides flexibility in bias design. The complementary PNP device (MMBT4403LT1G) enables push-pull and bridge configurations. The 600mA collector current makes this device suitable for driving LEDs, small relays, and other medium-current loads directly from microcontroller GPIO. The LT1G suffix indicates lead-free tape and reel packaging. The device is widely available from multiple manufacturers with pin-compatible equivalents.

The MMBT4401LT1G is a planar epitaxial NPN bipolar junction transistor optimized for medium-current general-purpose applications. The N+ emitter is diffused into the P-type base, which sits on the N-type epitaxial collector. The 40V VCEO is determined by the collector doping and thickness. The 600mA IC rating is set by the emitter area and wire bond capacity. The 250 MHz fT is higher than small-signal transistors like BC846B (100 MHz) due to the optimized emitter geometry and base width. The VCE(sat) of 0.75V at 500mA is relatively high for its class, indicating this device is optimized for linear amplification rather than saturated switching. The SOT-23 package limits power dissipation to 225 mW at 25C ambient, so continuous high-current operation requires careful thermal management.

Pin Name Type Function
1 Base Input Base terminal
2 Emitter I/O Emitter terminal
3 Collector I/O Collector terminal
  • 12V relay driver with 600mA sink current from 3.3V MCU GPIO
  • Class A audio preamplifier with MMBT4403 PNP complementary pair
  • Multi-LED string driver with 500mA pulsed current for camera flash
  • Logic-level MOSFET gate driver with 250MHz bandwidth
Manufacturer Part Number Package Notes
onsemi MMBT4403LT1G SOT-23 Complementary PNP device
onsemi MMBT2222ALT1G SOT-23 40V 600mA, alternative GP NPN
Nexperia BC847C,215 SOT-23 45V 100mA, lower current, higher hFE
onsemi MMBT5550LT1G SOT-23 140V 600mA, higher voltage NPN
Diodes Inc MMBT4401-7-F SOT-23 Pin-compatible equivalent
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