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IRFBC40PBF

600V 6.2A N-ch MOSFET, 2.2Ohm, TO-220AB, 30nC Qg, avalanche rated, PFC/flyback

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Manufacturer Part：

IRFBC40PBF

Package：

TO-220AB (15.60 x 10.40 x 4.60 mm, through-hole)

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Description

Product Overview

The IRFBC40PBF from Infineon (formerly International Rectifier) is a 600V, 6.2A N-channel power MOSFET in a TO-220AB package. With 2.2 Ohm RDS(on) and fast switching, it targets off-line switching power supplies and motor drives.

Key Specifications

VDSS 600 V
ID 6.2 A (at TC=25C)
RDS(on) 2.2 Ohm (max, VGS=10V)
Gate Charge (Qg) 30 nC (typical)
Input Capacitance 1050 pF (typical)
Power Dissipation 125 W (at TC=25C)

Features

  • 600V drain-source voltage for off-line and PFC applications
  • 2.2 Ohm RDS(on) for moderate conduction loss at 6.2A
  • 30nC low gate charge for fast switching and low drive power
  • TO-220AB through-hole package for easy heatsink mounting
  • 100% avalanche tested for ruggedness in inductive applications
  • Pb-free and RoHS compliant

Applications

  • Off-line switching power supplies and flyback converters
  • PFC boost converters up to 600V
  • Motor drives and inverter bridges
  • High-voltage load switching and solid-state relays

The IRFBC40PBF from Infineon (formerly International Rectifier) is a 600V, 6.2A N-channel power MOSFET in a TO-220AB through-hole package. The device is designed for high-voltage switching applications including off-line power supplies, PFC boost converters, and motor drives. The 2.2 Ohm maximum RDS(on) at VGS=10V provides moderate conduction loss suitable for medium-power applications at 600V. The 30nC typical gate charge enables fast switching with modest gate drive circuitry, reducing switching losses in hard-switched converters. The device is 100% avalanche tested, ensuring reliable operation in inductive switching environments where voltage spikes may exceed the rated VDS momentarily. The TO-220AB package allows direct heatsink mounting for thermal management at the 125W rated power dissipation. The device features a typical threshold voltage of 3-5V and is designed for standard 10V gate drive. As a classic IR HEXFET device, the IRFBC40 has been widely used in commercial power supply designs for decades, with proven reliability and extensive application literature available.

The IRFBC40PBF is a vertical N-channel power MOSFET using the HEXFET cell structure. (1) Structure: Thousands of hexagonal MOSFET cells are connected in parallel on the die. Each cell has a gate oxide, polysilicon gate, and body region. The vertical current flow from drain (bottom of die) through the N- drift region and channel to source (top of die) enables high voltage blocking and high current capability. (2) On-State: When VGS exceeds the threshold (3-5V), an inversion layer (channel) forms under the gate oxide, connecting the source N+ to the N- drift region. Current flows vertically through the channel and drift region. The 2.2 Ohm RDS(on) is dominated by the drift region resistance, which is necessary to support the 600V drain-source voltage. (3) Blocking: When VGS = 0V, the channel is absent and the body-drain P-N junction blocks current flow. The N- drift region depletes under applied VDS, supporting 600V. (4) Switching: The gate charge (30nC) must be supplied/removed to turn on/off the channel. The switching speed depends on the gate drive current capability. Fast gate drive reduces switching losses but increases EMI.

Pin Name Type Function
1 Gate Input Gate drive input
2 Drain Output Drain (high-voltage terminal, tab)
3 Source Output Source (current return)
  • Off-line switching power supplies and flyback converters at 600V
  • PFC boost converters with 30nC gate charge for fast switching
  • Motor drives and inverter bridges with avalanche ruggedness
  • High-voltage load switching and solid-state relays in TO-220AB
Manufacturer Part Number Package Notes
Infineon IRFBC40APBF TO-220AB Improved version
ST STF6N60M2 TO-220 600V, 5.5A, MDmesh M2
onsemi FQPF6N60C TO-220F 600V, 6A, SuperFET
Infineon IPD60R600P7S D2PAK-7 600V, 7A, SMD, CoolMOS
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