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FQT1N80TF-WS

N-channel MOSFET, 800V, 200mA, 20Ω RDS(on), SOT-223-3, QFET planar DMOS

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Manufacturer Part：

FQT1N80TF-WS

Package：

SOT-223-3 (TO-261) 6.5 x 3.5 x 1.6 mm

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Description

Product Overview

The onsemi FQT1N80TF-WS is an N-channel QFET enhancement-mode power MOSFET produced using planar stripe and DMOS technology. Housed in a SOT-223-3 surface-mount package, it offers a drain-source voltage of 800 V, a continuous drain current of 200 mA, and a maximum on-resistance of 20 Ω. The device is specifically tailored for high-voltage, low-current switching applications.

Key Specifications

FET Type N-Channel (Enhancement Mode)
Drain-Source Voltage (VDSS) 800 V
Continuous Drain Current (ID) 200 mA @ TC=25°C
RDS(on) (Max) 20 Ω @ 100 mA, VGS=10V
RDS(on) (Typ) 15.5 Ω @ 100 mA, VGS=10V
Gate Threshold Voltage (VGS(th)) 3.0V to 5.0V
Gate Charge (Qg) (Max) 7.2 nC @ 10V
Input Capacitance (Ciss) (Max) 195 pF @ 25V
Power Dissipation 2.1 W @ TC=25°C
Operating Temperature -55°C to +150°C (TJ)
Package SOT-223-3 (TO-261)

Features

  • 800 V drain-source voltage rating for high-voltage applications
  • Low gate charge of 5.5 nC (typical) for fast switching
  • Low reverse transfer capacitance (Crss) of 2.7 pF typical
  • 100% avalanche tested for robustness
  • Planar stripe and DMOS technology reduces on-resistance
  • Compact SOT-223-3 surface-mount package
  • RoHS compliant

Applications

  • Switched-mode power supplies (SMPS)
  • Active power factor correction (PFC)
  • Electronic lamp ballasts
  • High-voltage switching circuits
  • Auxiliary power rails in industrial systems

The onsemi FQT1N80TF-WS is an N-channel enhancement-mode power MOSFET produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology, now part of onsemi. The device is rated for 800 V drain-source voltage and 200 mA continuous drain current, making it suitable for high-voltage, low-current switching applications. The advanced DMOS technology specifically reduces on-state resistance while providing superior switching performance and high avalanche energy capability. With a typical RDS(on) of 15.5 Ω at 10V gate drive and low gate charge of 5.5 nC, the device achieves efficient switching with minimal drive power. The low reverse transfer capacitance (Crss) of 2.7 pF further enhances high-frequency switching performance. The compact SOT-223-3 package enables surface-mount assembly in space-constrained designs.

The FQT1N80TF-WS is an N-channel enhancement-mode MOSFET. When a positive voltage exceeding the threshold (3.0-5.0V) is applied between gate and source, an electric field induces a conductive channel between drain and source, allowing current flow. The on-resistance (RDS(on)) of 15.5 Ω (typical) at VGS=10V determines the conduction losses during the on-state. The planar stripe DMOS structure features thousands of parallel cells that share the drain current, reducing overall on-resistance while maintaining high voltage capability through the lightly doped drift region. During switching, the gate charge (Qg) of 5.5 nC must be supplied/removed to charge/discharge the gate capacitance, determining the switching speed. The low Crss of 2.7 pF minimizes the Miller effect, reducing switching losses. The device features a built-in body diode (drain-source diode) with a forward voltage of 1.4V, useful in inductive load applications. Avalanche rating of 90 mJ ensures the device can absorb energy from inductive transients without failure.

Pin Name Type Function
1 Gate Input Gate terminal — controls drain-source channel conductivity
2 Drain Output Drain terminal — connects to load and high-voltage supply
3 Source Power Source terminal — connects to ground or low-side reference
  • High-voltage auxiliary power supplies in SMPS circuits
  • Active power factor correction (PFC) switch in low-power converters
  • Electronic lamp ballast switching stages
  • High-voltage relay driver and solid-state switch circuits
  • Industrial control high-voltage switching and isolation
Manufacturer Part Number Package Notes
onsemi FQT1N60TF-WS SOT-223-3 600V variant, same package
Infineon IPD60R190P6 TO-252 Higher current, different package
STMicroelectronics STN2NK80Z DPAK 800V, 2A, higher power
Vishay IRFU420 TO-251AA 500V through-hole equivalent
onsemi FQD1N80 TO-251 Through-hole 800V version
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