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UCC5390ECDWV

17A isolated gate driver, 5kVRMS, UVLO-GND2, SiC/IGBT, SOIC-8 DWV

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Pieza del fabricante：

UCC5390ECDWV

Paquete：

SOIC-8 DWV (5.85 x 11.5 mm, 8.5mm creepage)

Marca：
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Descripción

Productos

The UCC5390ECDWV from Texas Instruments is a single-channel isolated gate driver with 17A peak source/sink current and UVLO referenced to GND2. With 5kVRMS isolation, 65ns propagation delay, and 100kV/μs CMTI, it drives IGBTs, SiC MOSFETs, and power MOSFETs in automotive and industrial applications in an 8-pin DWV package with 8.5mm creepage.

Especificaciones

Peak Source Current 17 A
Peak Sink Current 17 A
Tensión de aislamiento 5000 VRMS (DWV)
Retardo de propagación 65 ns (typical)
CMTI 100 kV/μs (minimum)
Input Supply Voltage 3 V to 15 V
Output Supply Voltage 13.2 V to 33 V
UVLO Threshold 12 V (typical)
Rise Time 26 ns
Fall Time 22 ns
Paquete SOIC-8 DWV (8.5mm creepage)
Temperatura de funcionamiento -40°C to +125°C

Características

  • 17A peak source and sink current for driving large IGBT and SiC MOSFET gate charges
  • 5kVRMS reinforced isolation with 7000VPK transient rating
  • UVLO referenced to GND2 for true undervoltage detection in bipolar supply configurations
  • SiO2 capacitive isolation technology with >40 year barrier lifetime
  • CMOS input logic with -5V negative voltage handling
  • AEC-Q100 qualified (UCC5390-Q1 variant) for automotive applications

Aplicaciones

  • Motor drive inverter IGBT and SiC MOSFET gate driving
  • HEV/EV traction inverter and on-board charger power stages
  • Solar inverter power module gate drive
  • High-voltage DC-DC converter isolated gate drive
  • UPS and industrial power supply isolated driver

The UCC5390ECDWV from Texas Instruments is a high-current single-channel isolated gate driver designed to drive IGBTs, SiC MOSFETs, and power MOSFETs in high-voltage applications. The device provides 17A peak source and sink current with UVLO2 referenced to GND2 (E variant), enabling true undervoltage detection in bipolar supply configurations commonly used with SiC and IGBT devices. The 5kVRMS reinforced isolation barrier uses SiO2 capacitive technology with over 40 years barrier lifetime, while the 8-pin DWV package provides 8.5mm creepage for high-voltage safety compliance. With 65ns typical propagation delay, 100kV/μs minimum CMTI, and 26ns/22ns rise/fall times, the UCC5390ECDWV delivers precise and robust gate drive for demanding power conversion applications.

The UCC5390ECDWV operates as a capacitive-isolated single-channel gate driver. (1) The input stage receives CMOS logic signals on the IN+ and IN- pins, with the primary side powered by VCC1 (3-15V). The input comparator determines the desired output state, and the digital signal is coupled across the isolation barrier using SiO2 capacitive isolation. (2) The output stage on the secondary side is powered by VCC2 (13.2-33V) and provides 17A peak source current through a parallel P-channel and N-channel MOSFET pull-up structure, and 17A peak sink current through an N-channel MOSFET pull-down. The UVLO2 referenced to GND2 ensures the output is disabled when VCC2 drops below 12V, protecting against insufficient gate drive voltage that could cause high dissipation in the power switch. (3) The capacitive isolation barrier provides galvanic isolation up to 5kVRMS with high common-mode transient immunity (CMTI) of 100kV/μs minimum, preventing false switching during high dv/dt events in motor drive and inverter applications.

Pin Nombre Función
1 VCC1 Primary side supply (3-15V)
2 EN+ Non-inverting input
3 EN- Inverting input
4 GND1 Primary side ground
5 GND2 Secondary side ground (UVLO ref)
6 OUTH Source output (pull-up)
7 VCC2 Secondary side supply (13.2-33V)
8 OUTL Sink output (pull-down)
  • Motor drive inverter SiC MOSFET and IGBT isolated gate drive with bipolar supply
  • HEV/EV traction inverter power module gate driving with 5kV isolation
  • Solar string inverter SiC MOSFET driver with high CMTI requirement
  • Industrial DC-DC converter isolated IGBT gate drive
  • UPS and server power supply isolated MOSFET driver
Modelo Fabricante Diferencia clave
UCC5390SCDWV TI Split output variant (separate source/sink)
UCC5350MCDWV TI 10A with Miller clamp
UCC5320ECDWV TI 4.3A/4.4A, UVLO-GND2
ADuM4135 Dispositivos analógicos Isolated IGBT driver, desat detection
Si823x Laboratorios Silicon Dual isolated gate driver
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