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STP150N10F7

N-channel MOSFET, 100V 120A, 5.5mOhm, TO-247

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Pieza del fabricante：

STP150N10F7

Paquete：

TO-247

Marca：
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Descripción

Productos

The STP150N10F7 from STMicroelectronics is a high-power N-channel MOSFET rated at 100V/120A with 5.5mOhm on-resistance in TO-247 for motor drive and power conversion.

Especificaciones

Paquete TO-247

Características

  • See datasheet for complete specifications
  • Industry-standard package

Aplicaciones

  • Industrial control
  • Consumer electronics
  • Communication equipment
  • Automotive electronics

The STP150N10F7 from STMicroelectronics is a high-power N-channel MOSFET rated at 100V/120A with 5.5mOhm on-resistance in TO-247 for motor drive and power conversion.

The STP150N10F7 is an N-channel power MOSFET from STMicroelectronics in TO-247, rated at 100V VDSS, 120A ID (continuous), and 5.5mOhm RDS(on) at VGS=10V. The STripFET F7 technology uses a stripe trench gate with optimized cell density, achieving very low RDS(on) for a 100V device in TO-247. The 5.5mOhm RDS(on) produces 66W conduction loss at 110A, requiring a substantial heatsink. The TO-247 package provides 0.4C/W junction-to-case thermal resistance; with a 0.3C/W heatsink and 0.1C/W thermal grease, the total thermal resistance is 0.8C/W, limiting dissipation to approximately 150W at 80C case temperature. The gate charge of 130nC at VGS=10V requires a gate driver capable of 2A peak current for 65ns switching times. The internal freewheeling body diode has trr = 100ns and Qrr = 200nC, making it suitable for half-bridge motor drives without external Schottky diodes at moderate frequencies (<50kHz). The device features a Kelvin source connection on the package (separate gate-return pin from the high-current source tab) on some variants, reducing gate-loop inductance and preventing ground bounce. The -F7 suffix specifies the STripFET F7 technology generation. Applications include: DC motor drives, UPS inverters, welding machines, and solar micro-inverters.

Pin Nombre Tipo Función
1 G Entrada Gate (VGS threshold 2-4V, max +/-20V, gate charge 130nC)
2 D Potencia Drain (100V VDSS, connects to load, tab connected internally)
3 S Potencia Source (connects to ground, current return, Kelvin source for gate return)
  • Industrial control
  • Consumer electronics
  • Communication equipment
  • Automotive electronics
    • Fabricante Número de pieza Paquete Notas
    STMicroelectronics STP150N10F7 TO-247 Same device, ST brand
    STMicroelectronics STW150N10F7 TO-247 Same die, different package option
    Infineon IPB180N10S4-03 TO-247 100V 120A 1.8mOhm, Infineon brand
    onsemi NTMFS6H800N D2PAK-7 100V 100A 2.4mOhm, SMD, onsemi
    Vishay IRFP4468PBF TO-247 100V 195A 1.5mOhm, Vishay brand
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