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NX3008NBK

N-CH Trench MOSFET, 30V, 400mA, 1.0Ω Ron, logic-level, AEC-Q101, SOT-23

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Pieza del fabricante：

NX3008NBK

Paquete：

SOT-23 (TO-236AB)

Marca：
Categorías de productos：
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Descripción

Productos

The NX3008NBK from Nexperia (formerly NXP) is a 30V N-channel Trench MOSFET with 1.0 Ω typical on-resistance at VGS=4.5V and 400 mA continuous drain current in a SOT-23 package. AEC-Q101 qualified with ESD protection up to 2 kV, it is designed for automotive relay driving, high-speed line driving, and low-side load switching.

Especificaciones

  • Channel Type: N-Channel (enhancement mode)
  • VDS: 30V
  • VGS: ±8V
  • ID: 400 mA (TA=25°C)
  • RDS(on): 1.0 Ω typ @ VGS=4.5V, ID=350 mA
  • RDS(on): 1.4 Ω max @ VGS=4.5V
  • RDS(on): 2.1 Ω max @ VGS=2.5V
  • VGS(th): 0.6V ~ 1.1V (typ 0.9V)
  • Qg: 0.52 nC typ @ VGS=4.5V
  • Qgd: 0.08 nC typ
  • Ciss: 34 pF typ
  • PTOT: 350 mW
  • ESD Protection: 2 kV HBM
  • AEC-Q101: Qualified
  • Operating Temperature: -55°C ~ 150°C
  • Package: SOT-23 (TO-236AB)

Características

  • Very fast switching speed
  • Low threshold voltage for direct logic drive
  • Trench MOSFET technology for low RDS(on)
  • AEC-Q101 qualified for automotive applications
  • ESD protection up to 2 kV
  • Low gate charge (0.52 nC) for efficient switching

Aplicaciones

  • Automotive relay driver
  • High-speed line driver
  • Low-side load switch
  • Logic-level signal switching
  • Battery-powered switching circuits

The NX3008NBK from Nexperia is a small-signal N-channel Trench MOSFET in a SOT-23 package, optimized for low-voltage switching applications where fast speed and low gate charge are essential. The device features 1.0 Ω typical on-resistance at VGS=4.5V and a low threshold voltage of 0.9V typical, enabling direct drive from 1.8V and 3.3V logic. The extremely low 0.52 nC total gate charge allows very fast switching with minimal drive power. The AEC-Q101 qualification and 2 kV ESD protection make it suitable for automotive applications such as relay driving and LED control modules. The NBK suffix indicates the SOT-23 package with tape and reel packaging.

The NX3008NBK uses Nexperia’s Trench MOSFET technology where vertical trenches are etched into the silicon and lined with gate oxide and polysilicon gate material. This structure creates a high cell density with short channel lengths, resulting in low on-resistance and fast switching. The low threshold voltage (0.6V to 1.1V) is achieved through careful channel doping optimization, allowing the device to be fully enhanced with logic-level gate voltages. The 2 kV ESD protection is integrated at the gate terminal through a clamping structure that limits gate voltage excursions during electrostatic discharge events, protecting the thin gate oxide from dielectric breakdown.

Pin Nombre Función
1 Puerta Gate terminal (logic-level drive)
2 Fuente Source terminal (ground reference)
3 Drenaje Drain terminal (connects to load)

The NX3008NBK is commonly used as a low-side switch for driving automotive relays where the 400 mA current rating and 30V voltage rating provide sufficient margin for relay coil driving. As a high-speed line driver, the 0.52 nC gate charge enables sub-microsecond switching for bus transceiver applications. In battery-powered devices, the low threshold voltage allows direct MCU drive from 1.8V logic. The AEC-Q101 qualification ensures reliability in the harsh automotive environment with temperature cycling and vibration. The SOT-23 footprint is ideal for space-constrained automotive ECUs and LED driver modules.

Modelo Fabricante Diferencia clave
2N7002BK,215 Nexperia 60V, 300mA, 1.9Ω, no AEC-Q101
BSS138K,215 Nexperia 50V, 220mA, 3.5Ω, low VGS(th)
DMN2075U-7 Diodos Inc 20V, 750mA, 0.75Ω, SOT-23
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