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LM74720-Q1

AEC-Q100 ideal diode controller, 4-65V, 11mV drop, 28µA IQ, drives N-FET, reverse polarity, SOT-23-6

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Pieza del fabricante：

LM74720-Q1

Paquete：

SOT-23-6 (2.9 x 1.6 x 1.1mm)

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Descripción

Productos

The LM74720-Q1 is an AEC-Q100 qualified ideal diode controller from Texas Instruments that drives an external N-channel MOSFET to emulate a near-ideal Schottky diode. With only 11mV forward voltage drop at 3A (typical, depends on MOSFET RDS-ON), 28µA IQ, and 10µA shutdown current, it replaces power-wasting Schottky diodes in automotive and industrial power ORing, reverse polarity protection, and battery backup applications. The 65V maximum rating suits 12V/24V automotive systems.

Especificaciones

Función Ideal Diode Controller (N-FET driver)
Operating Voltage 4V to 65V
Maximum Voltage (transient) 70V (load dump)
Forward Voltage Drop 11mV typical at 3A (with 3.7mΩ FET)
Reverse Current Block <1µA reverse leakage
Quiescent Current (ON) 28µA typical
Shutdown Current 10µA typical
GATE Drive Charge pump to drive external N-FET
Gate Turn-Off Time 0.5µs typical (fast reverse block)
EN Pin Yes (active high, internal pull-up)
Reverse Polarity Protection Yes (survives -65V on input)
Overvoltage Protection Yes (with external divider on OV pin)
UVLO Yes (adjustable via EN/UVLO divider)
Cualificación AEC-Q100 Grade 1
Paquete SOT-23-6 (2.9 x 1.6mm)
Temperatura de funcionamiento -40°C to +125°C

Características

  • Emulates ideal diode with external N-channel MOSFET
  • Ultra-low 11mV forward drop at 3A (vs 300-500mV Schottky)
  • 4V to 65V operating range, -65V reverse polarity survival
  • AEC-Q100 Grade 1 qualified
  • 28µA quiescent current (ON state)
  • 0.5µs fast reverse-current blocking
  • Enable/UVLO pin with adjustable threshold
  • Overvoltage protection with external divider
  • Charge pump gate drive for full MOSFET enhancement
  • Reverse polarity protection without external diode

Aplicaciones

  • Automotive battery reverse polarity protection
  • Power ORing / redundancy in 12V/24V systems
  • Battery backup switchover
  • Load dump protection
  • Industrial supply reverse protection
  • UPS and server power ORing

The LM74720-Q1 is an AEC-Q100 Grade 1 ideal diode controller from Texas Instruments that drives an external N-channel MOSFET to replace a Schottky diode with a near-ideal diode function. The forward voltage drop is determined solely by the MOSFET’s RDS-ON and the load current — typically 11mV at 3A with a 3.7mΩ FET, compared to 300-500mV for a Schottky. This eliminates the power dissipation and thermal challenges of Schottky diodes in high-current applications. The controller monitors the voltage across the MOSFET (ANODE to CATHODE) and enhances the gate when forward current flows, then rapidly turns off the gate (<0.5µs) when reverse current is detected. The device operates from 4V to 65V, survives -65V reverse polarity, and includes adjustable UVLO and overvoltage protection. The 28µA quiescent current is negligible in automotive 12V/24V systems.

The LM74720-Q1 controls an external N-channel MOSFET connected with its drain at the anode and source at the cathode (the MOSFET body diode points from anode to cathode, like a real diode). An internal charge pump generates the gate voltage above the anode to fully enhance the MOSFET. When the anode voltage exceeds the cathode (forward bias condition), the controller enhances the gate and the MOSFET conducts with very low RDS-ON. The controller continuously monitors the anode-to-cathode voltage; if the cathode voltage rises above the anode (reverse bias, e.g., due to input supply failure), the gate is pulled low within 0.5µs, blocking reverse current through the MOSFET channel (the body diode inherently blocks reverse current). The EN/UVLO pin enables or disables the controller with an adjustable threshold. The OV pin monitors the input voltage through a divider and turns off the MOSFET when overvoltage is detected, protecting downstream circuitry from load dump transients up to 70V.

Pin Nombre Descripción
1 EN/UVLO Enable/UVLO input (adjustable threshold)
2 GND Suelo
3 CATÁDICO Sense cathode (MOSFET source)
4 GATE Gate drive output (connect to MOSFET gate)
5 ANODE Sense anode (MOSFET drain)
6 OV Overvoltage sense (connect to divider)
  • 12V Automotive Reverse Battery Protection: Replace a 10A Schottky diode with the LM74720-Q1 driving a 3.7mΩ N-FET. At 5A load, the Schottky dissipates 2.5W (0.5V × 5A) while the ideal diode dissipates only 93mW (0.0186V × 5A). The -65V reverse polarity survival protects the vehicle ECU if the battery is connected backwards. The AEC-Q100 qualification ensures automotive reliability. No heatsink is needed.
  • 24V Redundant Power ORing: OR two 24V power supplies using two LM74720-Q1 circuits. Each supply feeds through an ideal diode to the common output bus. If one supply fails or its voltage drops, the corresponding ideal diode blocks reverse current within 0.5µs, preventing the failed supply from loading the bus. The OV pin protects against 70V load dump transients on the 24V bus.
  • Battery Backup Switchover: Use two LM74720-Q1 circuits to OR a primary supply with a backup battery. When the primary supply is present, its ideal diode conducts (low drop) and the battery’s ideal diode blocks (preventing battery charging). When the primary fails, the battery’s ideal diode conducts within microseconds, providing seamless backup. The 28µA IQ minimizes battery drain in the idle state.
Modelo Vin Max IQ Diferencia clave
LM74700-Q1 65V 20µA TI, no OV pin, simpler
MAX16141 65V 15µA ADI/Maxim, similar ideal diode
LTC4357 80V 550µA ADI, higher IQ, higher Vin
ITS42K5D 42V 50µA Infineon, integrated FET switch
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