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IRLL014NTRPBF

N-ch HEXFET MOSFET, 55V, 2.8A, 0.14Ω RDS(on), logic-level, SOT-223

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Pieza del fabricante：

IRLL014NTRPBF

Paquete：

SOT-223 (6.70 x 3.70 x 1.67 mm)

Marca：
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Descripción

Productos

The IRLL014NTRPBF from Infineon Technologies is an N-channel enhancement mode HEXFET power MOSFET in SOT-223 package with logic-level gate drive, designed for low voltage switching applications.

Especificaciones

Fabricante Infineon Technologies
Channel Type N-Channel
VDS 55V
ID 2.8A (PCB mount)
RDS(on) @ VGS=10V 0.14Ω typ
RDS(on) @ VGS=5V 0.20Ω max
VGS(th) 1.0V to 2.0V
Qg 9.5 nC typ
Ciss 230 pF
Power Dissipation 2.1W (PCB mount)
Paquete SOT-223
Temperatura de funcionamiento -55°C to +150°C

Características

  • Logic-level gate drive (VGS=4V rated)
  • Low RDS(on): 0.14Ω @ VGS=10V
  • Low gate charge: 9.5 nC typ
  • HEXFET fifth-generation technology
  • Full avalanche rated
  • Fast switching
  • Pb-free, RoHS compliant

Aplicaciones

  • Low voltage power switching
  • Convertidores CC-CC
  • Load switching
  • Battery management

The IRLL014NTRPBF from Infineon Technologies is an N-channel HEXFET power MOSFET in SOT-223 package using fifth-generation technology. Rated at 55V VDS and 2.8A ID, it features low on-resistance of 0.14Ω at VGS=10V and can be driven from logic-level gate voltages as low as 4V. The low 9.5 nC gate charge enables fast switching, and the device is fully avalanche rated.

As an enhancement-mode N-channel MOSFET, the IRLL014NTRPBF conducts when VGS exceeds the threshold (1.0-2.0V). The low threshold enables logic-level drive. The HEXFET trench technology achieves low RDS(on) per die area. Internal body diode provides reverse conduction path. Avalanche rating means the device can absorb energy from inductive kickback without external clamping.

Pin Nombre Función
1 G Puerta
2 D (tab) Drenaje
3 S Fuente
4 D (tab) Drain (connected to pin 2)
  • Low voltage DC-DC buck converters
  • Logic-level load switching
  • Battery-powered motor drive
  • Power management circuits
Fabricante Número de pieza Notas
Infineon IRLL024NTRPBF Lower RDS(on) variant
onsemi NTR4101NT1G Similar specs
Infineon IRLL2705TRPBF Higher voltage rated
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Address: Room 2919, Guoli Building, Huaqiang North, Futian District, Shenzhen, Guangdong, China
 

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