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IRF540N

N-channel 100V 33A power MOSFET, 44mOhm Ron, TO-220AB

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Pieza del fabricante：

IRF540N

Paquete：

TO-220AB

Marca：
Categorías de productos：
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Descripción

Productos

The IRF540N from Infineon Technologies is an N-channel enhancement-mode power MOSFET rated at 100V and 33A with 44mOhm on-resistance. Packaged in TO-220, it is widely used for medium-voltage power switching in motor drives, inverters, and power supplies.

Especificaciones

Tipo N-channel Enhancement MOSFET
VDS 100V
ID (continuo) 33A (at TC=25C)
RDS(on) 44mOhm (max at VGS=10V)
VGS(th) 2.0V to 4.0V
Power Dissipation 94W (at TC=25C)
Total Gate Charge 71nC (typ)
Paquete TO-220AB
Temperatura de funcionamiento -55 to +175 C

Características

  • 100V drain-source voltage rating
  • Low RDS(on): 44mOhm maximum
  • 33A continuous drain current
  • Dynamic dv/dt rating
  • Repetitive avalanche rated
  • Fast switching capability

Aplicaciones

  • Motor drive and control
  • Switching power supplies
  • Convertidores CC-CC
  • Inverter circuits

The IRF540N is an N-channel enhancement-mode power MOSFET from Infineon Technologies rated at 100V and 33A with a maximum on-resistance of 44mOhm. It uses advanced HEXFET processing technology to achieve low on-resistance and fast switching in a cost-effective TO-220AB package. The 100V rating provides adequate margin for 48V battery systems and 24V industrial supplies. The device is repetitive avalanche rated for ruggedness in unclamped inductive switching applications. Its combination of moderate voltage, high current, and low on-resistance makes it one of the most popular power MOSFETs for motor control and power conversion.

The IRF540N uses a vertical DMOS structure with planar stripe cell geometry. When VGS exceeds the threshold voltage (2-4V), an inversion layer forms under the gate oxide creating a conductive N-type channel between drain and source. At VGS=10V, the channel is fully enhanced with RDS(on) of 44mOhm. The vertical current flow from drain (back of die) through the channel to source (top of die) maximizes current handling. The built-in body diode provides a freewheeling path for inductive loads. The gate charge of 71nC determines the gate drive power needed for a given switching frequency.

Pin Nombre Función
1 Puerta Gate control input
2 Drenaje Drain terminal (connected to tab)
3 Fuente Source terminal
  • 48V battery motor controllers for e-bikes and scooters with 100V margin
  • 24V industrial power supply switching stages with 44mOhm conduction loss
  • H-bridge DC motor drivers in robotics applications
  • Solar charge controller load switches with 33A current capability
Modelo Fabricante Diferencia clave
IRFZ44N Infineon 55V, 49A, lower voltage, lower Ron
IRLZ44N Infineon 55V, logic-level gate
FQP30N06L onsemi 60V, 30A, logic-level
IRF640N Infineon 200V, 18A, higher voltage
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